Effect of Heat Treatment Under Nitrogen Atmosphere on Sprayed Fluorine Doped In2O3 Thin Films
Fluorine-doped indium oxide thin films (In 2 O 3 :F) were prepared at 500°C for different fluorine concentrations (0 at.%, 2 at.%, 6 at.% and 10 at.%) using the chemical spray pyrolysis technique. Structure and surface morphology of these films were characterized by x-ray diffraction (XRD) and atomi...
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| creator | Beji, Nasreddine Ajili, Mejda Turki, Najoua Kamoun |
| description | Fluorine-doped indium oxide thin films (In
2
O
3
:F) were prepared at 500°C for different fluorine concentrations (0 at.%, 2 at.%, 6 at.% and 10 at.%) using the chemical spray pyrolysis technique. Structure and surface morphology of these films were characterized by x-ray diffraction (XRD) and atomic force microscopy (AFM). XRD analysis revealed that fluorine doped In
2
O
3
thin films exhibit a centered cubic structure with the (400) preferential orientation. The change of the preferential reflection plane from (222) to (400) was found after doping. The doping optimum concentration of thin film crystal structure is obtained witha fluorine ratio equal to 2 at.%. The crystallinity improvement of In
2
O
3
:F (2 at.%) film is detected after annealing at 200°C, 300°C, and 400°C in nitrogen gas for 45 min. Transmission and reflection spectra measurements were performed over the wavelength range of 250–2500 nm. The band gap energy increase from 3.10 eV to 3.45 eV was detected after treatment at 400°C. In parallel, the electrical resistivity, deduced from Hall effect measurements, decreases from 428.90 × 10
−4
Ω cm to 6.58 × 10
−4
Ω cm. |
| doi_str_mv | 10.1007/s11664-016-4518-1 |
| format | Article |
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2
O
3
:F) were prepared at 500°C for different fluorine concentrations (0 at.%, 2 at.%, 6 at.% and 10 at.%) using the chemical spray pyrolysis technique. Structure and surface morphology of these films were characterized by x-ray diffraction (XRD) and atomic force microscopy (AFM). XRD analysis revealed that fluorine doped In
2
O
3
thin films exhibit a centered cubic structure with the (400) preferential orientation. The change of the preferential reflection plane from (222) to (400) was found after doping. The doping optimum concentration of thin film crystal structure is obtained witha fluorine ratio equal to 2 at.%. The crystallinity improvement of In
2
O
3
:F (2 at.%) film is detected after annealing at 200°C, 300°C, and 400°C in nitrogen gas for 45 min. Transmission and reflection spectra measurements were performed over the wavelength range of 250–2500 nm. The band gap energy increase from 3.10 eV to 3.45 eV was detected after treatment at 400°C. In parallel, the electrical resistivity, deduced from Hall effect measurements, decreases from 428.90 × 10
−4
Ω cm to 6.58 × 10
−4
Ω cm.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-016-4518-1</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Electronics ; Electronics and Microelectronics ; Fluorine ; Heat treating ; Instrumentation ; Materials Science ; Optical and Electronic Materials ; Solid State Physics ; Thin films</subject><ispartof>Journal of electronic materials, 2016-07, Vol.45 (7), p.3251-3258</ispartof><rights>The Minerals, Metals & Materials Society 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-539d6768e3f29fc738020460788e8130031a1534c25d1860bfc983562a4c9ed63</citedby><cites>FETCH-LOGICAL-c316t-539d6768e3f29fc738020460788e8130031a1534c25d1860bfc983562a4c9ed63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-016-4518-1$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-016-4518-1$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Beji, Nasreddine</creatorcontrib><creatorcontrib>Ajili, Mejda</creatorcontrib><creatorcontrib>Turki, Najoua Kamoun</creatorcontrib><title>Effect of Heat Treatment Under Nitrogen Atmosphere on Sprayed Fluorine Doped In2O3 Thin Films</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>Fluorine-doped indium oxide thin films (In
2
O
3
:F) were prepared at 500°C for different fluorine concentrations (0 at.%, 2 at.%, 6 at.% and 10 at.%) using the chemical spray pyrolysis technique. Structure and surface morphology of these films were characterized by x-ray diffraction (XRD) and atomic force microscopy (AFM). XRD analysis revealed that fluorine doped In
2
O
3
thin films exhibit a centered cubic structure with the (400) preferential orientation. The change of the preferential reflection plane from (222) to (400) was found after doping. The doping optimum concentration of thin film crystal structure is obtained witha fluorine ratio equal to 2 at.%. The crystallinity improvement of In
2
O
3
:F (2 at.%) film is detected after annealing at 200°C, 300°C, and 400°C in nitrogen gas for 45 min. Transmission and reflection spectra measurements were performed over the wavelength range of 250–2500 nm. The band gap energy increase from 3.10 eV to 3.45 eV was detected after treatment at 400°C. In parallel, the electrical resistivity, deduced from Hall effect measurements, decreases from 428.90 × 10
−4
Ω cm to 6.58 × 10
−4
Ω cm.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Electronics</subject><subject>Electronics and Microelectronics</subject><subject>Fluorine</subject><subject>Heat treating</subject><subject>Instrumentation</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Solid State Physics</subject><subject>Thin films</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>BENPR</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp1kLFOwzAQhi0EEqXwAGyWmA0-O3acsSotRaroQCuxICskdpuqsYOdDn17XIWBheVOJ33_ne5D6B7oI1CaP0UAKTNCQZJMgCJwgUYgMk5AyY9LNKJcAhGMi2t0E-OeUkgUjNDnzFpT9dhbvDBlj9ch1da4Hm9cbQJ-a_rgt8bhSd_62O1MMNg7_N6F8mRqPD8cfWicwc--S-OrYyuO17vG4XlzaOMturLlIZq73z5Gm_lsPV2Q5erldTpZkoqD7IngRS1zqQy3rLBVzhVlNJM0V8oo4JRyKEHwrGKiTv_QL1sVigvJyqwqTC35GD0Me7vgv48m9nrvj8GlkxryAhgHmkGiYKCq4GMMxuouNG0ZThqoPlvUg0WdLOqzRX3OsCETE-u2JvzZ_G_oBywdcjE</recordid><startdate>20160701</startdate><enddate>20160701</enddate><creator>Beji, Nasreddine</creator><creator>Ajili, Mejda</creator><creator>Turki, Najoua Kamoun</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope></search><sort><creationdate>20160701</creationdate><title>Effect of Heat Treatment Under Nitrogen Atmosphere on Sprayed Fluorine Doped In2O3 Thin Films</title><author>Beji, Nasreddine ; Ajili, Mejda ; Turki, Najoua Kamoun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-539d6768e3f29fc738020460788e8130031a1534c25d1860bfc983562a4c9ed63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Electronics</topic><topic>Electronics and Microelectronics</topic><topic>Fluorine</topic><topic>Heat treating</topic><topic>Instrumentation</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Solid State Physics</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Beji, Nasreddine</creatorcontrib><creatorcontrib>Ajili, Mejda</creatorcontrib><creatorcontrib>Turki, Najoua Kamoun</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Beji, Nasreddine</au><au>Ajili, Mejda</au><au>Turki, Najoua Kamoun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Heat Treatment Under Nitrogen Atmosphere on Sprayed Fluorine Doped In2O3 Thin Films</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2016-07-01</date><risdate>2016</risdate><volume>45</volume><issue>7</issue><spage>3251</spage><epage>3258</epage><pages>3251-3258</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><abstract>Fluorine-doped indium oxide thin films (In
2
O
3
:F) were prepared at 500°C for different fluorine concentrations (0 at.%, 2 at.%, 6 at.% and 10 at.%) using the chemical spray pyrolysis technique. Structure and surface morphology of these films were characterized by x-ray diffraction (XRD) and atomic force microscopy (AFM). XRD analysis revealed that fluorine doped In
2
O
3
thin films exhibit a centered cubic structure with the (400) preferential orientation. The change of the preferential reflection plane from (222) to (400) was found after doping. The doping optimum concentration of thin film crystal structure is obtained witha fluorine ratio equal to 2 at.%. The crystallinity improvement of In
2
O
3
:F (2 at.%) film is detected after annealing at 200°C, 300°C, and 400°C in nitrogen gas for 45 min. Transmission and reflection spectra measurements were performed over the wavelength range of 250–2500 nm. The band gap energy increase from 3.10 eV to 3.45 eV was detected after treatment at 400°C. In parallel, the electrical resistivity, deduced from Hall effect measurements, decreases from 428.90 × 10
−4
Ω cm to 6.58 × 10
−4
Ω cm.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-016-4518-1</doi><tpages>8</tpages></addata></record> |
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| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Electronics Electronics and Microelectronics Fluorine Heat treating Instrumentation Materials Science Optical and Electronic Materials Solid State Physics Thin films |
| title | Effect of Heat Treatment Under Nitrogen Atmosphere on Sprayed Fluorine Doped In2O3 Thin Films |
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