Porous AlN with a Low Dielectric Constant Synthesized Based on the Physical Vapor Transport Principle
Porous AlN with low dielectric constant has been synthesized by the sacrificial template method based on the physical vapor transport principle. It is quite different from the traditional method that mixes the matrix with a pore-forming agent and utilizes liquid-phase sintering. The method consists...
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| Veröffentlicht in: | Journal of electronic materials 2016-07, Vol.45 (7), p.3263-3267 |
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| container_title | Journal of electronic materials |
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| creator | Wang, Hua-Jie Liu, Xue-Chao Kong, Hai-Kuan Xin, Jun Gao, Pan Shi, Er-Wei |
| description | Porous AlN with low dielectric constant has been synthesized by the sacrificial template method based on the physical vapor transport principle. It is quite different from the traditional method that mixes the matrix with a pore-forming agent and utilizes liquid-phase sintering. The method consists of two parts. Firstly, AlN powder is placed in a graphite crucible. C/AlN composite can be formed by mixing decomposed AlN vapor and volatile carbon originated from a crucible at high temperature. Secondly, pores are formed after removing carbon from the C/AlN composite by an annealing process. The structure, morphology, porosity and properties of porous AlN are characterized. It is shown the obtained porous AlN has a thermal conductivity of 37.3 W/(m K) and a reduced dielectric constant of 5.5–6.1 (at 1 MHz). The porosity measured by a mercury porosimeter is 24.09%. It has been experimentally proved that porous AlN with a sufficiently porous structure and properties can be synthesized based on the vapor-phase principle. |
| doi_str_mv | 10.1007/s11664-016-4577-3 |
| format | Article |
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It is quite different from the traditional method that mixes the matrix with a pore-forming agent and utilizes liquid-phase sintering. The method consists of two parts. Firstly, AlN powder is placed in a graphite crucible. C/AlN composite can be formed by mixing decomposed AlN vapor and volatile carbon originated from a crucible at high temperature. Secondly, pores are formed after removing carbon from the C/AlN composite by an annealing process. The structure, morphology, porosity and properties of porous AlN are characterized. It is shown the obtained porous AlN has a thermal conductivity of 37.3 W/(m K) and a reduced dielectric constant of 5.5–6.1 (at 1 MHz). The porosity measured by a mercury porosimeter is 24.09%. It has been experimentally proved that porous AlN with a sufficiently porous structure and properties can be synthesized based on the vapor-phase principle.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-016-4577-3</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Dielectrics ; Electronics ; Electronics and Microelectronics ; Heat conductivity ; Instrumentation ; Materials Science ; Optical and Electronic Materials ; Solid State Physics</subject><ispartof>Journal of electronic materials, 2016-07, Vol.45 (7), p.3263-3267</ispartof><rights>The Minerals, Metals & Materials Society 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c478t-75b1929106f9cf963f38fffc456f3b21b8f0cb60275062566f0e15df3d0eb3dc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-016-4577-3$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-016-4577-3$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,41467,42536,51298</link.rule.ids></links><search><creatorcontrib>Wang, Hua-Jie</creatorcontrib><creatorcontrib>Liu, Xue-Chao</creatorcontrib><creatorcontrib>Kong, Hai-Kuan</creatorcontrib><creatorcontrib>Xin, Jun</creatorcontrib><creatorcontrib>Gao, Pan</creatorcontrib><creatorcontrib>Shi, Er-Wei</creatorcontrib><title>Porous AlN with a Low Dielectric Constant Synthesized Based on the Physical Vapor Transport Principle</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>Porous AlN with low dielectric constant has been synthesized by the sacrificial template method based on the physical vapor transport principle. It is quite different from the traditional method that mixes the matrix with a pore-forming agent and utilizes liquid-phase sintering. The method consists of two parts. Firstly, AlN powder is placed in a graphite crucible. C/AlN composite can be formed by mixing decomposed AlN vapor and volatile carbon originated from a crucible at high temperature. Secondly, pores are formed after removing carbon from the C/AlN composite by an annealing process. The structure, morphology, porosity and properties of porous AlN are characterized. It is shown the obtained porous AlN has a thermal conductivity of 37.3 W/(m K) and a reduced dielectric constant of 5.5–6.1 (at 1 MHz). The porosity measured by a mercury porosimeter is 24.09%. It has been experimentally proved that porous AlN with a sufficiently porous structure and properties can be synthesized based on the vapor-phase principle.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Dielectrics</subject><subject>Electronics</subject><subject>Electronics and Microelectronics</subject><subject>Heat conductivity</subject><subject>Instrumentation</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Solid State Physics</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp1kE1LAzEQhoMoWKs_wFvAczSz2WR3j7V-QtGCVbyFbDaxKetmTbaU-utNqQcvXmaG4f2AB6FzoJdAaXEVAYTICQVBcl4UhB2gEfCcESjF-yEaUSaA8IzxY3QS44pS4FDCCJm5D34d8aR9whs3LLHCM7_BN860Rg_BaTz1XRxUN-CXbTcsTXTfpsHXKqbpO5w-eL7cRqdVi99U7wNeBNXFdAx4HlynXd-aU3RkVRvN2e8eo9e728X0gcye7x-nkxnReVEOpOA1VFkFVNhK20owy0prrc65sKzOoC4t1bWgWcGpyLgQlhrgjWUNNTVrNBuji31uH_zX2sRBrvw6dKlSQlFBxmhVlkkFe5UOPsZgrOyD-1RhK4HKHU25pykTTbmjKVnyZHtPTNruw4Q_yf-afgCh4HfU</recordid><startdate>20160701</startdate><enddate>20160701</enddate><creator>Wang, Hua-Jie</creator><creator>Liu, Xue-Chao</creator><creator>Kong, Hai-Kuan</creator><creator>Xin, Jun</creator><creator>Gao, Pan</creator><creator>Shi, Er-Wei</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope></search><sort><creationdate>20160701</creationdate><title>Porous AlN with a Low Dielectric Constant Synthesized Based on the Physical Vapor Transport Principle</title><author>Wang, Hua-Jie ; 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It is quite different from the traditional method that mixes the matrix with a pore-forming agent and utilizes liquid-phase sintering. The method consists of two parts. Firstly, AlN powder is placed in a graphite crucible. C/AlN composite can be formed by mixing decomposed AlN vapor and volatile carbon originated from a crucible at high temperature. Secondly, pores are formed after removing carbon from the C/AlN composite by an annealing process. The structure, morphology, porosity and properties of porous AlN are characterized. It is shown the obtained porous AlN has a thermal conductivity of 37.3 W/(m K) and a reduced dielectric constant of 5.5–6.1 (at 1 MHz). The porosity measured by a mercury porosimeter is 24.09%. It has been experimentally proved that porous AlN with a sufficiently porous structure and properties can be synthesized based on the vapor-phase principle.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-016-4577-3</doi><tpages>5</tpages></addata></record> |
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| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Dielectrics Electronics Electronics and Microelectronics Heat conductivity Instrumentation Materials Science Optical and Electronic Materials Solid State Physics |
| title | Porous AlN with a Low Dielectric Constant Synthesized Based on the Physical Vapor Transport Principle |
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