Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET

A metal nitride-interlayer-semiconductor source/ drain (MN-I-S S/D) model is newly proposed to investigate the effect of tantalum nitride (TaN) on the specific contact resistivity (ρ c ) of an MN-I-S S/D with an undoped interlayer (undoped-IL) or a heavily doped IL (n + -IL) in sub-10-nm n-type Ge F...

Ausführliche Beschreibung