Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET
A metal nitride-interlayer-semiconductor source/ drain (MN-I-S S/D) model is newly proposed to investigate the effect of tantalum nitride (TaN) on the specific contact resistivity (ρ c ) of an MN-I-S S/D with an undoped interlayer (undoped-IL) or a heavily doped IL (n + -IL) in sub-10-nm n-type Ge F...
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| Veröffentlicht in: | IEEE electron device letters 2016-06, Vol.37 (6), p.705-708 |
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| container_title | IEEE electron device letters |
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| creator | Juhan Ahn Jeong-Kyu Kim Sun-Woo Kim Gwang-Sik Kim Changhwan Shin Jong-Kook Kim Byung Jin Cho Hyun-Yong Yu |
| description | A metal nitride-interlayer-semiconductor source/ drain (MN-I-S S/D) model is newly proposed to investigate the effect of tantalum nitride (TaN) on the specific contact resistivity (ρ c ) of an MN-I-S S/D with an undoped interlayer (undoped-IL) or a heavily doped IL (n + -IL) in sub-10-nm n-type Ge FinFETs. In this model, the workfunction variation of TaN was considered following the Rayleigh distribution. Compared with MN-I-S structures with an undoped-IL, structures with an n + -IL generate much lower ρ c values (i.e., ~2 × 10 -9 Ω · cm 2 ) and are less prone to variation. In addition, the impact of Pc variation on device performance is investigated using 3-D technology computer aided design simulation for undoped or heavily doped ILs in MN-I-S S/D structures. MN-I-S S/Ds with an n + -IL can achieve much lower current variation and a higher ON-state drive current. |
| doi_str_mv | 10.1109/LED.2016.2553132 |
| format | Article |
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In this model, the workfunction variation of TaN was considered following the Rayleigh distribution. Compared with MN-I-S structures with an undoped-IL, structures with an n + -IL generate much lower ρ c values (i.e., ~2 × 10 -9 Ω · cm 2 ) and are less prone to variation. In addition, the impact of Pc variation on device performance is investigated using 3-D technology computer aided design simulation for undoped or heavily doped ILs in MN-I-S S/D structures. MN-I-S S/Ds with an n + -IL can achieve much lower current variation and a higher ON-state drive current.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2016.2553132</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>CAD ; CMOS ; Computer aided design ; Conductivity ; FinFET ; FinFETs ; germanium ; interlayer ; Performance evaluation ; Semiconductor process modeling ; specific contact resistivity ; tantalum nitride ; Tunneling ; variation ; workfunction ; Zinc oxide</subject><ispartof>IEEE electron device letters, 2016-06, Vol.37 (6), p.705-708</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7451242$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7451242$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Juhan Ahn</creatorcontrib><creatorcontrib>Jeong-Kyu Kim</creatorcontrib><creatorcontrib>Sun-Woo Kim</creatorcontrib><creatorcontrib>Gwang-Sik Kim</creatorcontrib><creatorcontrib>Changhwan Shin</creatorcontrib><creatorcontrib>Jong-Kook Kim</creatorcontrib><creatorcontrib>Byung Jin Cho</creatorcontrib><creatorcontrib>Hyun-Yong Yu</creatorcontrib><title>Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>A metal nitride-interlayer-semiconductor source/ drain (MN-I-S S/D) model is newly proposed to investigate the effect of tantalum nitride (TaN) on the specific contact resistivity (ρ c ) of an MN-I-S S/D with an undoped interlayer (undoped-IL) or a heavily doped IL (n + -IL) in sub-10-nm n-type Ge FinFETs. In this model, the workfunction variation of TaN was considered following the Rayleigh distribution. Compared with MN-I-S structures with an undoped-IL, structures with an n + -IL generate much lower ρ c values (i.e., ~2 × 10 -9 Ω · cm 2 ) and are less prone to variation. In addition, the impact of Pc variation on device performance is investigated using 3-D technology computer aided design simulation for undoped or heavily doped ILs in MN-I-S S/D structures. MN-I-S S/Ds with an n + -IL can achieve much lower current variation and a higher ON-state drive current.</description><subject>CAD</subject><subject>CMOS</subject><subject>Computer aided design</subject><subject>Conductivity</subject><subject>FinFET</subject><subject>FinFETs</subject><subject>germanium</subject><subject>interlayer</subject><subject>Performance evaluation</subject><subject>Semiconductor process modeling</subject><subject>specific contact resistivity</subject><subject>tantalum nitride</subject><subject>Tunneling</subject><subject>variation</subject><subject>workfunction</subject><subject>Zinc oxide</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9js1Lw0AUxBdRsFbvgpcFz9vu28_sUWpbC1XB1nPYJC-wpd3UZCvkvzdSEQYG3vyYN4TcA58AcDddz58ngoOZCK0lSHFBRqB1xrg28pKMuFXAJHBzTW66bsc5KGXViBzndY1lok1NXzH5PX0LqQ0V0ibSWROTH7IP7EKXwndI_T_HVjFhu_c9tmyJdNOc2hKnz60PkQ7anAoGnMUDjWzbH5EOzCLExXx7S65qv-_w7s_H5HO4zl7Y-n25mj2tWRBcJpah0FIW0spSqdJCVqlMm8I4LJRFUcpaltxVrnYSKml84ZzwxlnLoUQHXI7J47n32DZfJ-xSvhs2xuFlDtZx48DxX-rhTAVEzI9tOPi2z63SIJSQPzK6YkY</recordid><startdate>201606</startdate><enddate>201606</enddate><creator>Juhan Ahn</creator><creator>Jeong-Kyu Kim</creator><creator>Sun-Woo Kim</creator><creator>Gwang-Sik Kim</creator><creator>Changhwan Shin</creator><creator>Jong-Kook Kim</creator><creator>Byung Jin Cho</creator><creator>Hyun-Yong Yu</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>201606</creationdate><title>Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET</title><author>Juhan Ahn ; Jeong-Kyu Kim ; Sun-Woo Kim ; Gwang-Sik Kim ; Changhwan Shin ; Jong-Kook Kim ; Byung Jin Cho ; Hyun-Yong Yu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i203t-8e2533b373c44c718d4856b69eb47e2c3f3c09d9f931d36ab992a697701ce9103</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>CAD</topic><topic>CMOS</topic><topic>Computer aided design</topic><topic>Conductivity</topic><topic>FinFET</topic><topic>FinFETs</topic><topic>germanium</topic><topic>interlayer</topic><topic>Performance evaluation</topic><topic>Semiconductor process modeling</topic><topic>specific contact resistivity</topic><topic>tantalum nitride</topic><topic>Tunneling</topic><topic>variation</topic><topic>workfunction</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Juhan Ahn</creatorcontrib><creatorcontrib>Jeong-Kyu Kim</creatorcontrib><creatorcontrib>Sun-Woo Kim</creatorcontrib><creatorcontrib>Gwang-Sik Kim</creatorcontrib><creatorcontrib>Changhwan Shin</creatorcontrib><creatorcontrib>Jong-Kook Kim</creatorcontrib><creatorcontrib>Byung Jin Cho</creatorcontrib><creatorcontrib>Hyun-Yong Yu</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Juhan Ahn</au><au>Jeong-Kyu Kim</au><au>Sun-Woo Kim</au><au>Gwang-Sik Kim</au><au>Changhwan Shin</au><au>Jong-Kook Kim</au><au>Byung Jin Cho</au><au>Hyun-Yong Yu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2016-06</date><risdate>2016</risdate><volume>37</volume><issue>6</issue><spage>705</spage><epage>708</epage><pages>705-708</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>A metal nitride-interlayer-semiconductor source/ drain (MN-I-S S/D) model is newly proposed to investigate the effect of tantalum nitride (TaN) on the specific contact resistivity (ρ c ) of an MN-I-S S/D with an undoped interlayer (undoped-IL) or a heavily doped IL (n + -IL) in sub-10-nm n-type Ge FinFETs. In this model, the workfunction variation of TaN was considered following the Rayleigh distribution. Compared with MN-I-S structures with an undoped-IL, structures with an n + -IL generate much lower ρ c values (i.e., ~2 × 10 -9 Ω · cm 2 ) and are less prone to variation. In addition, the impact of Pc variation on device performance is investigated using 3-D technology computer aided design simulation for undoped or heavily doped ILs in MN-I-S S/D structures. MN-I-S S/Ds with an n + -IL can achieve much lower current variation and a higher ON-state drive current.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2016.2553132</doi><tpages>4</tpages></addata></record> |
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| subjects | CAD CMOS Computer aided design Conductivity FinFET FinFETs germanium interlayer Performance evaluation Semiconductor process modeling specific contact resistivity tantalum nitride Tunneling variation workfunction Zinc oxide |
| title | Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET |
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