Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

This paper reports an experimental demonstration of the time-dependent failure of GaN-on-Si power high-electron-mobility transistors with p-GaN gate, submitted to a forward gate stress. By means of combined dc, optical analysis, and 2-D simulations, we demonstrate the following original results: 1)...

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Veröffentlicht in:	IEEE transactions on electron devices 2016-06, Vol.63 (6), p.2334-2339
Hauptverfasser:	Rossetto, Isabella, Meneghini, Matteo, Hilt, Oliver, Bahat-Treidel, Eldad, De Santi, Carlo, Dalcanale, Stefano, Wuerfl, Joachim, Zanoni, Enrico, Meneghesso, Gaudenzio
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN/GaN high-electron-mobility transistor (HEMT) Aluminum gallium nitride breakdown Degradation Devices Electric fields Electric potential emission microscopy Failure Gates HEMTs Logic gates Luminescence MODFETs p-GaN gate Semiconductor devices Stress Stresses Time dependence Transistors
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