Ferromagnetism in GaAs/InAs/GaAs Quantum Dot Layer Delta-Doped with Mn
Transport, magnetotransport and magnetic properties of structures GaAs/InAs/GaAs with a InAs quantum dot (QD) layer have been investigated in the temperature interval 4.2
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Veröffentlicht in: | Solid state phenomena 2015-07, Vol.233-234, p.93-96 |
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creator | Kulbachinskii, V.A. Oveshnikov, Leonid N. Aronzon, Boris A. |
description | Transport, magnetotransport and magnetic properties of structures GaAs/InAs/GaAs with a InAs quantum dot (QD) layer have been investigated in the temperature interval 4.2 |
doi_str_mv | 10.4028/www.scientific.net/SSP.233-234.93 |
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The structures were delta-doped by Mn from a one side to provide magnetic properties and by carbon from the other side to enhance a p-type conductivity. The ferromagnetic phase up to 400 K was detected by SQUID magnetometer. Anomalous Hall-effect was observed at low T. The role of additional disorder in conducting channel due to the QD layer was investigated. It is shown a principal role of a fluctuation potential of Mn layer separated from conducting QD layer by a spacer in anomalous transport properties of structures. 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title | Ferromagnetism in GaAs/InAs/GaAs Quantum Dot Layer Delta-Doped with Mn |
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