Electrically Inactive Dopants in Heavily Doped As-Grown Czochralski Silicon

To determine the electrically inactive fraction of As or P in heavily doped as-grown Czochralski Si 4-point resistivity and SIMS measurements were carried out. No clear trend for the electrical inactive fraction was found with an increasing dopant concentration, though a mean electrical inactive fra...

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Veröffentlicht in:	Solid state phenomena 2015-10, Vol.242, p.10-14
Hauptverfasser:	Lehmann, Lothar, Zschorsch, Markus, Elsayed, Mohamed, Krause-Rehberg, Reinhard, Friedrich, Jochen, Stockmeier, Ludwig
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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