Electrical Characterization and Defect-Related Luminescence in Oxygen Implanted Silicon

Defect structure, electrical properties and defect-related luminescence (DRL) of light emitting diodes (LED) with the active defect-rich region produced by oxygen implantation and a subsequent multistep annealing of silicon wafers were investigated. It was found that defect-rich regions possess an e...

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Veröffentlicht in:	Solid state phenomena 2015-10, Vol.242, p.368-373
Hauptverfasser:	Vyvenko, O.F., Vdovin, V.I., Aruev, P.N., Sobolev, N.A., Shek, E.I., Loshachenko, A.S., Danilov, D.V., Zabrodskiy, V.V.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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