Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs

This letter reports an in-depth study of the negative threshold voltage instability in GaN-on-Si metal-insulator-semiconductor high electron mobility transistors with partially recessed AlGaN. Based on a set of stress/recovery experiments carried out at several temperatures, we demonstrate that: 1)...

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Veröffentlicht in:	IEEE electron device letters 2016-04, Vol.37 (4), p.474-477
Hauptverfasser:	Meneghini, Matteo, Rossetto, Isabella, Bisi, Davide, Ruzzarin, Maria, Van Hove, Marleen, Stoffels, Steve, Tian-Li Wu, Marcon, Denis, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides degradation gallium nitride Gates HEMT High electron mobility transistors Instability Insulators Logic gates MIS Semiconductor devices Stability Stress Stress measurement Temperature measurement Threshold voltage Time measurement trapping Voltage measurement
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