Compact Model of Dielectric Breakdown in Spin-Transfer Torque Magnetic Tunnel Junction
Spin-transfer torque magnetic tunnel junction (MTJ) is a promising candidate for nonvolatile memories thanks to its high speed, low power, infinite endurance, and easy integration with CMOS circuits. However, a relatively high current flowing through an MTJ is always required by most of the switchin...
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| Veröffentlicht in: | IEEE transactions on electron devices 2016-04, Vol.63 (4), p.1762-1767 |
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| container_title | IEEE transactions on electron devices |
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| creator | You Wang Hao Cai De Barros Naviner, Lirida Alves Yue Zhang Xiaoxuan Zhao Deng, Erya Klein, Jacques-Olivier Weisheng Zhao |
| description | Spin-transfer torque magnetic tunnel junction (MTJ) is a promising candidate for nonvolatile memories thanks to its high speed, low power, infinite endurance, and easy integration with CMOS circuits. However, a relatively high current flowing through an MTJ is always required by most of the switching mechanisms, which results in a high electric field in the MTJ and a significant self-heating effect. This may lead to the dielectric breakdown of the ultrathin (~1 nm) oxide barrier in the MTJ and cause functional errors of hybrid CMOS/MTJ circuits. This paper analyzes the physical mechanisms of time-dependent dielectric breakdown (TDDB) in an oxide barrier and proposes an SPICE-compact model of the MTJ. The simulation results show great consistency with the experimental measurements. This model can be used to execute a more realistic design according to the constraints obtained from simulation. The users can estimate the lifetime, the operation voltage margin, and the failure probability caused by TDDB in the MTJ-based circuits. |
| doi_str_mv | 10.1109/TED.2016.2533438 |
| format | Article |
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However, a relatively high current flowing through an MTJ is always required by most of the switching mechanisms, which results in a high electric field in the MTJ and a significant self-heating effect. This may lead to the dielectric breakdown of the ultrathin (~1 nm) oxide barrier in the MTJ and cause functional errors of hybrid CMOS/MTJ circuits. This paper analyzes the physical mechanisms of time-dependent dielectric breakdown (TDDB) in an oxide barrier and proposes an SPICE-compact model of the MTJ. The simulation results show great consistency with the experimental measurements. This model can be used to execute a more realistic design according to the constraints obtained from simulation. The users can estimate the lifetime, the operation voltage margin, and the failure probability caused by TDDB in the MTJ-based circuits.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2016.2533438</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Breakdown probability ; Breakdown voltage ; Dielectric breakdown ; Engineering Sciences ; Integrated circuit modeling ; lifetime of magnetic tunnel junction (MTJ) ; Magnetic tunneling ; Micro and nanotechnologies ; Microelectronics ; reliability analysis ; Resistance ; Switches ; switching voltage margin ; Weibull distribution</subject><ispartof>IEEE transactions on electron devices, 2016-04, Vol.63 (4), p.1762-1767</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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However, a relatively high current flowing through an MTJ is always required by most of the switching mechanisms, which results in a high electric field in the MTJ and a significant self-heating effect. This may lead to the dielectric breakdown of the ultrathin (~1 nm) oxide barrier in the MTJ and cause functional errors of hybrid CMOS/MTJ circuits. This paper analyzes the physical mechanisms of time-dependent dielectric breakdown (TDDB) in an oxide barrier and proposes an SPICE-compact model of the MTJ. The simulation results show great consistency with the experimental measurements. This model can be used to execute a more realistic design according to the constraints obtained from simulation. 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However, a relatively high current flowing through an MTJ is always required by most of the switching mechanisms, which results in a high electric field in the MTJ and a significant self-heating effect. This may lead to the dielectric breakdown of the ultrathin (~1 nm) oxide barrier in the MTJ and cause functional errors of hybrid CMOS/MTJ circuits. This paper analyzes the physical mechanisms of time-dependent dielectric breakdown (TDDB) in an oxide barrier and proposes an SPICE-compact model of the MTJ. The simulation results show great consistency with the experimental measurements. This model can be used to execute a more realistic design according to the constraints obtained from simulation. The users can estimate the lifetime, the operation voltage margin, and the failure probability caused by TDDB in the MTJ-based circuits.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2016.2533438</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-6320-4153</orcidid><orcidid>https://orcid.org/0000-0002-6917-2199</orcidid></addata></record> |
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| subjects | Breakdown probability Breakdown voltage Dielectric breakdown Engineering Sciences Integrated circuit modeling lifetime of magnetic tunnel junction (MTJ) Magnetic tunneling Micro and nanotechnologies Microelectronics reliability analysis Resistance Switches switching voltage margin Weibull distribution |
| title | Compact Model of Dielectric Breakdown in Spin-Transfer Torque Magnetic Tunnel Junction |
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