Suppression of phonon-mediated hot carrier relaxation in type-II InAs/AlAsxSb1 − x quantum wells: a practical route to hot carrier solar cells

InAs/AlAsxSb1 − x quantum wells are investigated for their potential as hot carrier solar cells. Continuous wave power and temperature‐dependent photoluminescence indicate a transition in the dominant hot carrier relaxation process from conventional phonon‐mediated carrier relaxation below 90 K to a...

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Veröffentlicht in:	Progress in photovoltaics 2016-05, Vol.24 (5), p.591-599
Hauptverfasser:	Esmaielpour, Hamidreza, Whiteside, Vincent R., Tang, Jinfeng, Vijeyaragunathan, Sangeetha, Mishima, Tetsuya D., Cairns, Shayne, Santos, Michael B., Wang, Bin, Sellers, Ian R.
Format:	Artikel
Sprache:	eng
Schlagworte:	hot carriers phonon bottleneck effect type-II band alignment
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