Passivation of n ^-Type Si Surfaces by Low Temperature Processed SiO /Al O Stacks

The surface passivation of SiO 2 /Al 2 O 3 stacks prepared at low process temperatures was investigated on phosphorous diffused n + -type Si surfaces with a broad range of sheet resistances. Two kinds of SiO 2 films were prepared, the first with plasma-enhanced chemical vapor deposition (PECVD) and...

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Veröffentlicht in:	IEEE journal of photovoltaics 2013-07, Vol.3 (3), p.925-929
Hauptverfasser:	Bordihn, S., Dingemans, G., Mertens, V., Muller, J. W., Kessels, W. M. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Chemicals Court decisions Fixed charge density Passivation phosphorous diffusion Photovoltaic cells Semiconductors Silicon SiO _{2} /Al _{2} O _{3} stacks surface passivation Surface resistance
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