In Situ Microfabrication and Measurements of Bi2Se3 Ultrathin Films in a Multichamber System with a Focused Ion Beam, Molecular Beam Epitaxy, and Four-Tip Scanning Tunneling Microscope

Ultrathin films of Bi2Se3 grown on Si(111) substrate were etched into submicron-width wires by using a focused ion beam (FIB), and their electrical resistance was measured using the four-probe method with a four-tip scanning tunneling microscope. All of the procedures were performed in situ in ultra...

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Veröffentlicht in:E-journal of surface science and nanotechnology 2014/10/11, Vol.12, pp.423-430
Hauptverfasser: Fukui, Naoya, Hobara, Rei, Hirahara, Toru, Hasegawa, Shuji, Miyatake, Yutaka, Mizuno, Hiroyuki, Sasaki, Toru, Nagamura, Toshihiko
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container_title E-journal of surface science and nanotechnology
container_volume 12
creator Fukui, Naoya
Hobara, Rei
Hirahara, Toru
Hasegawa, Shuji
Miyatake, Yutaka
Mizuno, Hiroyuki
Sasaki, Toru
Nagamura, Toshihiko
description Ultrathin films of Bi2Se3 grown on Si(111) substrate were etched into submicron-width wires by using a focused ion beam (FIB), and their electrical resistance was measured using the four-probe method with a four-tip scanning tunneling microscope. All of the procedures were performed in situ in ultrahigh vacuum without exposing the sample to air. One-dimensional conduction of the films was confirmed from the dependence of the resistance on the length of wire under measurement, meaning that successful lossless current path control laterally as well as vertically can be obtained with FIB etching. Protecting the sample surface from unintentional gallium ion beam irradiation in the FIB process was also found to be important for maintaining the intrinsic electrical properties of the Bi2Se3 films. [DOI: 10.1380/ejssnt.2014.423]
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subjects Electrical transport measurements
Focused ion beam
Ion etching
Multiprobe method
Scanning Tunneling Microscopy
title In Situ Microfabrication and Measurements of Bi2Se3 Ultrathin Films in a Multichamber System with a Focused Ion Beam, Molecular Beam Epitaxy, and Four-Tip Scanning Tunneling Microscope
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