In Situ Microfabrication and Measurements of Bi2Se3 Ultrathin Films in a Multichamber System with a Focused Ion Beam, Molecular Beam Epitaxy, and Four-Tip Scanning Tunneling Microscope
Ultrathin films of Bi2Se3 grown on Si(111) substrate were etched into submicron-width wires by using a focused ion beam (FIB), and their electrical resistance was measured using the four-probe method with a four-tip scanning tunneling microscope. All of the procedures were performed in situ in ultra...
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Veröffentlicht in: | E-journal of surface science and nanotechnology 2014/10/11, Vol.12, pp.423-430 |
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creator | Fukui, Naoya Hobara, Rei Hirahara, Toru Hasegawa, Shuji Miyatake, Yutaka Mizuno, Hiroyuki Sasaki, Toru Nagamura, Toshihiko |
description | Ultrathin films of Bi2Se3 grown on Si(111) substrate were etched into submicron-width wires by using a focused ion beam (FIB), and their electrical resistance was measured using the four-probe method with a four-tip scanning tunneling microscope. All of the procedures were performed in situ in ultrahigh vacuum without exposing the sample to air. One-dimensional conduction of the films was confirmed from the dependence of the resistance on the length of wire under measurement, meaning that successful lossless current path control laterally as well as vertically can be obtained with FIB etching. Protecting the sample surface from unintentional gallium ion beam irradiation in the FIB process was also found to be important for maintaining the intrinsic electrical properties of the Bi2Se3 films. [DOI: 10.1380/ejssnt.2014.423] |
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Surf. Sci. Nanotechnol.</addtitle><description>Ultrathin films of Bi2Se3 grown on Si(111) substrate were etched into submicron-width wires by using a focused ion beam (FIB), and their electrical resistance was measured using the four-probe method with a four-tip scanning tunneling microscope. All of the procedures were performed in situ in ultrahigh vacuum without exposing the sample to air. One-dimensional conduction of the films was confirmed from the dependence of the resistance on the length of wire under measurement, meaning that successful lossless current path control laterally as well as vertically can be obtained with FIB etching. Protecting the sample surface from unintentional gallium ion beam irradiation in the FIB process was also found to be important for maintaining the intrinsic electrical properties of the Bi2Se3 films. [DOI: 10.1380/ejssnt.2014.423]</description><subject>Electrical transport measurements</subject><subject>Focused ion beam</subject><subject>Ion etching</subject><subject>Multiprobe method</subject><subject>Scanning Tunneling Microscopy</subject><issn>1348-0391</issn><issn>1348-0391</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpNUctu2zAQFIIUyKM990og18jhy5R4SxPYrYEYOdg5ExS1imlIlEpSSPxn_bxSdhvkQs5iZ3YHO1n2neAZYSW-g30ILs4oJnzGKTvLLgnjZY6ZJOef8EV2FcIeY1awQlxmf1YObWwc0doa3ze68tboaHuHtKvRGnQYPXTgYkB9gx4s3QBDL230Ou6sQ0vbdgEloNF6bKM1O91V4NHmECJ06M3GXWotezMGqNEqjX0A3d2idd-CGVvtjzVaDDbq98PtcemyH32-tQPaGO2cda9oOzoH7YSOLoPpB_iafWl0G-Dbv_86e1kuto-_8qfnn6vHH0-54UzEXGAoOKV1KWXJxVxURBZNUVdz0xhqCqG1FFBX1Mw5o5hhKSshJKkEKUojK8Kus5vT3MH3v0cIUe2TP5dWKlLMORGYY5lYdyfWZC94aNTgbaf9QRGspnjUKR41xaNSPElxf1LsQ9Sv8MHXPl2xhf98QhWeniT5aKUjewWO_QULbp1p</recordid><startdate>20140101</startdate><enddate>20140101</enddate><creator>Fukui, Naoya</creator><creator>Hobara, Rei</creator><creator>Hirahara, Toru</creator><creator>Hasegawa, Shuji</creator><creator>Miyatake, Yutaka</creator><creator>Mizuno, Hiroyuki</creator><creator>Sasaki, Toru</creator><creator>Nagamura, Toshihiko</creator><general>The Japan Society of Vacuum and Surface Science</general><general>Japan Science and Technology Agency</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20140101</creationdate><title>In Situ Microfabrication and Measurements of Bi2Se3 Ultrathin Films in a Multichamber System with a Focused Ion Beam, Molecular Beam Epitaxy, and Four-Tip Scanning Tunneling Microscope</title><author>Fukui, Naoya ; Hobara, Rei ; Hirahara, Toru ; Hasegawa, Shuji ; Miyatake, Yutaka ; Mizuno, Hiroyuki ; Sasaki, Toru ; Nagamura, Toshihiko</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c436t-60e7422d89984656b197f7db5cfc2c76aa96edb2c543203099b6691b6178c9b13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Electrical transport measurements</topic><topic>Focused ion beam</topic><topic>Ion etching</topic><topic>Multiprobe method</topic><topic>Scanning Tunneling Microscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fukui, Naoya</creatorcontrib><creatorcontrib>Hobara, Rei</creatorcontrib><creatorcontrib>Hirahara, Toru</creatorcontrib><creatorcontrib>Hasegawa, Shuji</creatorcontrib><creatorcontrib>Miyatake, Yutaka</creatorcontrib><creatorcontrib>Mizuno, Hiroyuki</creatorcontrib><creatorcontrib>Sasaki, Toru</creatorcontrib><creatorcontrib>Nagamura, Toshihiko</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>E-journal of surface science and nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fukui, Naoya</au><au>Hobara, Rei</au><au>Hirahara, Toru</au><au>Hasegawa, Shuji</au><au>Miyatake, Yutaka</au><au>Mizuno, Hiroyuki</au><au>Sasaki, Toru</au><au>Nagamura, Toshihiko</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>In Situ Microfabrication and Measurements of Bi2Se3 Ultrathin Films in a Multichamber System with a Focused Ion Beam, Molecular Beam Epitaxy, and Four-Tip Scanning Tunneling Microscope</atitle><jtitle>E-journal of surface science and nanotechnology</jtitle><addtitle>e-J. Surf. Sci. Nanotechnol.</addtitle><date>2014-01-01</date><risdate>2014</risdate><volume>12</volume><spage>423</spage><epage>430</epage><pages>423-430</pages><issn>1348-0391</issn><eissn>1348-0391</eissn><abstract>Ultrathin films of Bi2Se3 grown on Si(111) substrate were etched into submicron-width wires by using a focused ion beam (FIB), and their electrical resistance was measured using the four-probe method with a four-tip scanning tunneling microscope. All of the procedures were performed in situ in ultrahigh vacuum without exposing the sample to air. One-dimensional conduction of the films was confirmed from the dependence of the resistance on the length of wire under measurement, meaning that successful lossless current path control laterally as well as vertically can be obtained with FIB etching. 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subjects | Electrical transport measurements Focused ion beam Ion etching Multiprobe method Scanning Tunneling Microscopy |
title | In Situ Microfabrication and Measurements of Bi2Se3 Ultrathin Films in a Multichamber System with a Focused Ion Beam, Molecular Beam Epitaxy, and Four-Tip Scanning Tunneling Microscope |
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