High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET With Low Thermal Budget Process
We present a high-performance Si/Ge/Si p-channel metal-oxide-semiconductor field-effect transistor (pMOSFET) with a NiSiGe Schottky junction source/drain (S/D) formed through microwave-activated annealing. A Schottky contact S/D is preferable, because the lower process temperature is beneficial for...
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| Veröffentlicht in: | IEEE electron device letters 2016-01, Vol.37 (1), p.8-11 |
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| container_title | IEEE electron device letters |
| container_volume | 37 |
| creator | Hsu, Chung-Chun Tsai, Yi-He Chen, Che-Wei Li, Jyun-Han Lin, Yu-Hsien Lee, Yao-Jen Luo, Guang-Li Chien, Chao-Hsin |
| description | We present a high-performance Si/Ge/Si p-channel metal-oxide-semiconductor field-effect transistor (pMOSFET) with a NiSiGe Schottky junction source/drain (S/D) formed through microwave-activated annealing. A Schottky contact S/D is preferable, because the lower process temperature is beneficial for eliminating Ge diffusion. The fabricated NiSiGe Schottky junction exhibited a high effective barrier height (Φ Bn ) of 0.69 eV for electrons, resulting in a high junction current ratio of more than 10 5 at the applied voltage of |Va| = 1 V. Our quantum-well pMOSFET exhibited a high I ON /I OFF ratio of ~10 7 (I S ) and a moderate subthreshold swing of 166 mV/decade. |
| doi_str_mv | 10.1109/LED.2015.2501841 |
| format | Article |
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A Schottky contact S/D is preferable, because the lower process temperature is beneficial for eliminating Ge diffusion. The fabricated NiSiGe Schottky junction exhibited a high effective barrier height (Φ Bn ) of 0.69 eV for electrons, resulting in a high junction current ratio of more than 10 5 at the applied voltage of |Va| = 1 V. 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(IEEE) 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c324t-5d6549e65438230885d0714f773262efc1ba138e6420e75b235b4d88ea116ae63</citedby><cites>FETCH-LOGICAL-c324t-5d6549e65438230885d0714f773262efc1ba138e6420e75b235b4d88ea116ae63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7331593$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7331593$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Hsu, Chung-Chun</creatorcontrib><creatorcontrib>Tsai, Yi-He</creatorcontrib><creatorcontrib>Chen, Che-Wei</creatorcontrib><creatorcontrib>Li, Jyun-Han</creatorcontrib><creatorcontrib>Lin, Yu-Hsien</creatorcontrib><creatorcontrib>Lee, Yao-Jen</creatorcontrib><creatorcontrib>Luo, Guang-Li</creatorcontrib><creatorcontrib>Chien, Chao-Hsin</creatorcontrib><title>High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET With Low Thermal Budget Process</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>We present a high-performance Si/Ge/Si p-channel metal-oxide-semiconductor field-effect transistor (pMOSFET) with a NiSiGe Schottky junction source/drain (S/D) formed through microwave-activated annealing. A Schottky contact S/D is preferable, because the lower process temperature is beneficial for eliminating Ge diffusion. The fabricated NiSiGe Schottky junction exhibited a high effective barrier height (Φ Bn ) of 0.69 eV for electrons, resulting in a high junction current ratio of more than 10 5 at the applied voltage of |Va| = 1 V. Our quantum-well pMOSFET exhibited a high I ON /I OFF ratio of ~10 7 (I S ) and a moderate subthreshold swing of 166 mV/decade.</description><subject>Annealing</subject><subject>Channels</subject><subject>Contact</subject><subject>Drains</subject><subject>Electric potential</subject><subject>Germanium</subject><subject>Junctions</subject><subject>Metals</subject><subject>Microwave-activated annealing (MWA)</subject><subject>MOSFET</subject><subject>MOSFET circuits</subject><subject>NiSiGe</subject><subject>PMOSFET</subject><subject>quantum well (QW)</subject><subject>Quantum wells</subject><subject>Schottky barrier height</subject><subject>Schottky barriers</subject><subject>Silicon</subject><subject>Voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpd0E1P20AQBuAVaiXSwB2Jy0q9cHE6sx_ezZGmFCoFQQWIo7Vxxthge9Pdtar8-9oK4tDLzOV5R6OXsTOEBSIsv62vfiwEoF4IDWgVHrEZam0z0Ln8xGZgFGYSIT9mX2J8BUCljJqx-qZ5qbN7CpUPnetL4g9l7VN62_OV75MrE_89uD4NXfZMbcuvaWLN0PFV7fqeWr67vXv4efXIn5tU87X_yx_rybT8-7B9ocTvgy8pxhP2uXJtpNP3PWdPY2p1k63vrn-tLtdZKYVKmd7mWi1pHNIKCdbqLRhUlTFS5IKqEjcOpaVcCSCjN0LqjdpaSw4xd5TLObs43N0F_2egmIquieX4uuvJD7FAs5RCGqvFSL_-R1_9EPrxu1FpAWAkTAoOqgw-xkBVsQtN58K-QCim6oux-mKqvnivfoycHyINEX1wIyXqpZT_AO3IfSg</recordid><startdate>201601</startdate><enddate>201601</enddate><creator>Hsu, Chung-Chun</creator><creator>Tsai, Yi-He</creator><creator>Chen, Che-Wei</creator><creator>Li, Jyun-Han</creator><creator>Lin, Yu-Hsien</creator><creator>Lee, Yao-Jen</creator><creator>Luo, Guang-Li</creator><creator>Chien, Chao-Hsin</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>201601</creationdate><title>High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET With Low Thermal Budget Process</title><author>Hsu, Chung-Chun ; Tsai, Yi-He ; Chen, Che-Wei ; Li, Jyun-Han ; Lin, Yu-Hsien ; Lee, Yao-Jen ; Luo, Guang-Li ; Chien, Chao-Hsin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c324t-5d6549e65438230885d0714f773262efc1ba138e6420e75b235b4d88ea116ae63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Annealing</topic><topic>Channels</topic><topic>Contact</topic><topic>Drains</topic><topic>Electric potential</topic><topic>Germanium</topic><topic>Junctions</topic><topic>Metals</topic><topic>Microwave-activated annealing (MWA)</topic><topic>MOSFET</topic><topic>MOSFET circuits</topic><topic>NiSiGe</topic><topic>PMOSFET</topic><topic>quantum well (QW)</topic><topic>Quantum wells</topic><topic>Schottky barrier height</topic><topic>Schottky barriers</topic><topic>Silicon</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hsu, Chung-Chun</creatorcontrib><creatorcontrib>Tsai, Yi-He</creatorcontrib><creatorcontrib>Chen, Che-Wei</creatorcontrib><creatorcontrib>Li, Jyun-Han</creatorcontrib><creatorcontrib>Lin, Yu-Hsien</creatorcontrib><creatorcontrib>Lee, Yao-Jen</creatorcontrib><creatorcontrib>Luo, Guang-Li</creatorcontrib><creatorcontrib>Chien, Chao-Hsin</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hsu, Chung-Chun</au><au>Tsai, Yi-He</au><au>Chen, Che-Wei</au><au>Li, Jyun-Han</au><au>Lin, Yu-Hsien</au><au>Lee, Yao-Jen</au><au>Luo, Guang-Li</au><au>Chien, Chao-Hsin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET With Low Thermal Budget Process</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2016-01</date><risdate>2016</risdate><volume>37</volume><issue>1</issue><spage>8</spage><epage>11</epage><pages>8-11</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>We present a high-performance Si/Ge/Si p-channel metal-oxide-semiconductor field-effect transistor (pMOSFET) with a NiSiGe Schottky junction source/drain (S/D) formed through microwave-activated annealing. A Schottky contact S/D is preferable, because the lower process temperature is beneficial for eliminating Ge diffusion. The fabricated NiSiGe Schottky junction exhibited a high effective barrier height (Φ Bn ) of 0.69 eV for electrons, resulting in a high junction current ratio of more than 10 5 at the applied voltage of |Va| = 1 V. Our quantum-well pMOSFET exhibited a high I ON /I OFF ratio of ~10 7 (I S ) and a moderate subthreshold swing of 166 mV/decade.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2015.2501841</doi><tpages>4</tpages></addata></record> |
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| subjects | Annealing Channels Contact Drains Electric potential Germanium Junctions Metals Microwave-activated annealing (MWA) MOSFET MOSFET circuits NiSiGe PMOSFET quantum well (QW) Quantum wells Schottky barrier height Schottky barriers Silicon Voltage |
| title | High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET With Low Thermal Budget Process |
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