Analysis and Equivalent-Circuit Model for CMOS On-Chip Multiple Coupled Inductors in the Millimeter-Wave Region
A growing number of on-chip inductors have been applied in the millimeter-wave IC design. The coupling effects between them have a negative impact on the performance of the circuit and each on-chip inductor. In this paper, a new equivalent-circuit model and a parameter extraction method for multiple...
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| Veröffentlicht in: | IEEE transactions on electron devices 2015-12, Vol.62 (12), p.3957-3964 |
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| container_title | IEEE transactions on electron devices |
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| creator | Gao, Zongzhi Kang, Kai Jiang, Zhengdong Wu, Yunqiu Zhao, Chenxi Ban, Yong-Lin Sun, Lingling Xue, Quan Yin, Wen-Yan |
| description | A growing number of on-chip inductors have been applied in the millimeter-wave IC design. The coupling effects between them have a negative impact on the performance of the circuit and each on-chip inductor. In this paper, a new equivalent-circuit model and a parameter extraction method for multiple on-chip inductors in the millimeter-wave region are proposed. The impacts of coupling effects on every onchip inductor are comprehensive considered in the proposed parameter extraction method. The characteristics of the multiple on-chip-coupled inductors are analyzed, modeled, and measured. The test structures were fabricated by 0.18-μm and 90-nm CMOS processes. The inductances, quality factors, and S-parameters of the model agree well with the measured performance of on-chip-nested and side-by-side-coupled inductors over a wide frequency range from 10 MHz up to millimeter-wave frequency band. |
| doi_str_mv | 10.1109/TED.2015.2488840 |
| format | Article |
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The coupling effects between them have a negative impact on the performance of the circuit and each on-chip inductor. In this paper, a new equivalent-circuit model and a parameter extraction method for multiple on-chip inductors in the millimeter-wave region are proposed. The impacts of coupling effects on every onchip inductor are comprehensive considered in the proposed parameter extraction method. The characteristics of the multiple on-chip-coupled inductors are analyzed, modeled, and measured. The test structures were fabricated by 0.18-μm and 90-nm CMOS processes. The inductances, quality factors, and S-parameters of the model agree well with the measured performance of on-chip-nested and side-by-side-coupled inductors over a wide frequency range from 10 MHz up to millimeter-wave frequency band.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2015.2488840</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Capacitance ; CMOS ; CMOs technology ; Equivalence ; Equivalent circuits ; equivalent-circuit model ; Extraction ; Frequency ranges ; Inductors ; Integrated circuits ; Joining ; Mathematical models ; millimeter wave ; Millimeter wave technology ; multiple coupled inductors ; nested coupled inductors ; Quality factor ; Semiconductor device modeling ; Semiconductors ; System-on-chip</subject><ispartof>IEEE transactions on electron devices, 2015-12, Vol.62 (12), p.3957-3964</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Dec 2015</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c460t-3b399143048ce098a18c2b9084f9406e0deb9b6108ca9a631a68b934d32a55ab3</citedby><cites>FETCH-LOGICAL-c460t-3b399143048ce098a18c2b9084f9406e0deb9b6108ca9a631a68b934d32a55ab3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7312452$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7312452$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Gao, Zongzhi</creatorcontrib><creatorcontrib>Kang, Kai</creatorcontrib><creatorcontrib>Jiang, Zhengdong</creatorcontrib><creatorcontrib>Wu, Yunqiu</creatorcontrib><creatorcontrib>Zhao, Chenxi</creatorcontrib><creatorcontrib>Ban, Yong-Lin</creatorcontrib><creatorcontrib>Sun, Lingling</creatorcontrib><creatorcontrib>Xue, Quan</creatorcontrib><creatorcontrib>Yin, Wen-Yan</creatorcontrib><title>Analysis and Equivalent-Circuit Model for CMOS On-Chip Multiple Coupled Inductors in the Millimeter-Wave Region</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>A growing number of on-chip inductors have been applied in the millimeter-wave IC design. The coupling effects between them have a negative impact on the performance of the circuit and each on-chip inductor. In this paper, a new equivalent-circuit model and a parameter extraction method for multiple on-chip inductors in the millimeter-wave region are proposed. The impacts of coupling effects on every onchip inductor are comprehensive considered in the proposed parameter extraction method. The characteristics of the multiple on-chip-coupled inductors are analyzed, modeled, and measured. The test structures were fabricated by 0.18-μm and 90-nm CMOS processes. The inductances, quality factors, and S-parameters of the model agree well with the measured performance of on-chip-nested and side-by-side-coupled inductors over a wide frequency range from 10 MHz up to millimeter-wave frequency band.</description><subject>Capacitance</subject><subject>CMOS</subject><subject>CMOs technology</subject><subject>Equivalence</subject><subject>Equivalent circuits</subject><subject>equivalent-circuit model</subject><subject>Extraction</subject><subject>Frequency ranges</subject><subject>Inductors</subject><subject>Integrated circuits</subject><subject>Joining</subject><subject>Mathematical models</subject><subject>millimeter wave</subject><subject>Millimeter wave technology</subject><subject>multiple coupled inductors</subject><subject>nested coupled inductors</subject><subject>Quality factor</subject><subject>Semiconductor device modeling</subject><subject>Semiconductors</subject><subject>System-on-chip</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkUFLwzAYhoMoOKd3wUvAi5fOpEmz5Djq1MHGQCceS9p-cxlZsyXtYP_ejA0Pnl4-eN738D0I3VMyoJSo58X4ZZASmg1SLqXk5AL1aJYNEyW4uEQ9QqhMFJPsGt2EsI6n4DztITdqtD0EE7BuajzedWavLTRtkhtfdabFM1eDxUvncT6bf-J5k-Qrs8WzzrZmawHnrotR40lTd1XrfMCmwe0K8MxYazbQgk--9R7wB_wY19yiq6W2Ae7O2Udfr-NF_p5M52-TfDRNKi5Im7CSKUU5I1xWQJTUVFZpqYjkS8WJAFJDqUpBiay00oJRLWSpGK9ZqrNMl6yPnk67W-92HYS22JhQgbW6AdeFgg6loCITQxHRx3_o2nU-vuVIsfjLLOVppMiJqrwLwcOy2Hqz0f5QUFIcDRTRQHE0UJwNxMrDqWIA4A8fMprGSfYLe2SAbw</recordid><startdate>20151201</startdate><enddate>20151201</enddate><creator>Gao, Zongzhi</creator><creator>Kang, Kai</creator><creator>Jiang, Zhengdong</creator><creator>Wu, Yunqiu</creator><creator>Zhao, Chenxi</creator><creator>Ban, Yong-Lin</creator><creator>Sun, Lingling</creator><creator>Xue, Quan</creator><creator>Yin, Wen-Yan</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| subjects | Capacitance CMOS CMOs technology Equivalence Equivalent circuits equivalent-circuit model Extraction Frequency ranges Inductors Integrated circuits Joining Mathematical models millimeter wave Millimeter wave technology multiple coupled inductors nested coupled inductors Quality factor Semiconductor device modeling Semiconductors System-on-chip |
| title | Analysis and Equivalent-Circuit Model for CMOS On-Chip Multiple Coupled Inductors in the Millimeter-Wave Region |
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