Three-Terminal Device for Realizing a Voltage-Driven Spin Transistor

We propose a three-terminal device incorporating a magnetic tunnel junction (MTJ) in which the free layer magnetization can be controlled by the separated gate electrode through voltage-induced magnetic anisotropy change-in other words, a voltage-driven spin transistor. We have developed a process f...

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Veröffentlicht in:	IEEE transactions on magnetics 2015-12, Vol.51 (12), p.1-4
Hauptverfasser:	Shiota, Yoichi, Sekiya, Daisuke, Matsumoto, Rie, Fukushima, Akio, Yakushiji, Kay, Nozaki, Takayuki, Konishi, Katsunori, Miwa, Shinji, Kubota, Hitoshi, Yuasa, Shinji, Suzuki, Yoshishige
Format:	Artikel
Sprache:	eng
Schlagworte:	Electrons Junctions Logic gates Magnetic anisotropy magnetic tunnel junction (MTJ) Magnetic tunneling Magnetism Magnetization Resistance spin transistor spintronics Transistors voltage-induced magnetic anisotropy change
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