Paper No P22: A Study on the Characteristics of IZO-TFTs with High-k HfSiOx Gate Insulator Annealed in Various Conditions

In this work, we investigate the enhanced performance of IZO‐based TFTs with HfSiOx gate insulators. HfSiOx gate insulators, annealed at various conditions, are deposited by co‐sputtering of HfO2 and Si. The HfSiOx structural properties are investigated using AFM, XRD, and XPS techniques. Furthermor...

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Veröffentlicht in:	SID International Symposium Digest of technical papers 2015-09, Vol.46 (S1), p.89-89
Hauptverfasser:	Lim, Yoo Seong, Im, Yong Jin, Ha, Seung Soo, Park, Chan Hee, Jang, Min-hyung, Choi, Seung-il, Park, Ji-in, Yi, Moonsuk
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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