Paper No P22: A Study on the Characteristics of IZO-TFTs with High-k HfSiOx Gate Insulator Annealed in Various Conditions

Paper No P22: A Study on the Characteristics of IZO-TFTs with High-k HfSiOx Gate Insulator Annealed in Various Conditions

In this work, we investigate the enhanced performance of IZO‐based TFTs with HfSiOx gate insulators. HfSiOx gate insulators, annealed at various conditions, are deposited by co‐sputtering of HfO2 and Si. The HfSiOx structural properties are investigated using AFM, XRD, and XPS techniques. Furthermor...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2015-09, Vol.46 (S1), p.89-89
Hauptverfasser: Lim, Yoo Seong, Im, Yong Jin, Ha, Seung Soo, Park, Chan Hee, Jang, Min-hyung, Choi, Seung-il, Park, Ji-in, Yi, Moonsuk
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container_end_page 89
container_issue S1
container_start_page 89
container_title SID International Symposium Digest of technical papers
container_volume 46
creator Lim, Yoo Seong
Im, Yong Jin
Ha, Seung Soo
Park, Chan Hee
Jang, Min-hyung
Choi, Seung-il
Park, Ji-in
Yi, Moonsuk
description In this work, we investigate the enhanced performance of IZO‐based TFTs with HfSiOx gate insulators. HfSiOx gate insulators, annealed at various conditions, are deposited by co‐sputtering of HfO2 and Si. The HfSiOx structural properties are investigated using AFM, XRD, and XPS techniques. Furthermore, the electrical characteristics are analyzed to investigate the effect of annealing conditions. We obtain optimal results for TFTs with HfSiOx gate insulators annealed for 1 h at 100°C, with a saturation mobility of 1.2 cm2/V·s, threshold voltage of 2.2 V, Ion/Ioff ratio of 2.0 × 106, and insulator surface roughness of 0.187 nm RMS.
doi_str_mv 10.1002/sdtp.10504
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title Paper No P22: A Study on the Characteristics of IZO-TFTs with High-k HfSiOx Gate Insulator Annealed in Various Conditions
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