Investigation of Structural, Chemical, and Electrical Properties of CdTe/Back Contact Interface by TEM and XPS
CdTe solar cell back contact preparation usually includes a chemical etching process which helps to obtain a Te-rich p -doped CdTe surface. In this work we compared the influence of two different etching solutions [nitric–phosphoric (NP) and nitric–acetic acid (NA)] on the CdTe surface. Transmis...
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| Veröffentlicht in: | Journal of electronic materials 2015-10, Vol.44 (10), p.3327-3333 |
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| creator | Han, Jun-feng Krishnakumar, V. Schimper, H.-J. Cha, Li-mei Liao, Cheng |
| description | CdTe solar cell back contact preparation usually includes a chemical etching process which helps to obtain a Te-rich
p
-doped CdTe surface. In this work we compared the influence of two different etching solutions [nitric–phosphoric (NP) and nitric–acetic acid (NA)] on the CdTe surface. Transmission electron microscopy indicated that a Te-rich layer was formed on the surface of polycrystalline CdTe films after the etching process. The layer thickness was 80 nm and 10 nm for NP and NA etching solutions, respectively. In addition, the images showed that the influence of the etching solution was preferentially along the grain boundaries. The chemical properties of the etched CdTe surface were studied by using x-ray photoelectron spectroscopy. The nitric–phosphoric acid yielded a relatively thicker Te-rich layer on the CdTe surface. On the other hand, the
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properties of the solar cells prepared using nitric–acetic acid showed no rollover behavior, indicating improved back contact. The solar cells prepared with the NA and NP etching processes yielded >10% solar cell efficiency. The CdTe solar cell homogeneity was improved by the NA etching method. |
| doi_str_mv | 10.1007/s11664-015-3816-3 |
| format | Article |
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p
-doped CdTe surface. In this work we compared the influence of two different etching solutions [nitric–phosphoric (NP) and nitric–acetic acid (NA)] on the CdTe surface. Transmission electron microscopy indicated that a Te-rich layer was formed on the surface of polycrystalline CdTe films after the etching process. The layer thickness was 80 nm and 10 nm for NP and NA etching solutions, respectively. In addition, the images showed that the influence of the etching solution was preferentially along the grain boundaries. The chemical properties of the etched CdTe surface were studied by using x-ray photoelectron spectroscopy. The nitric–phosphoric acid yielded a relatively thicker Te-rich layer on the CdTe surface. On the other hand, the
J
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V
properties of the solar cells prepared using nitric–acetic acid showed no rollover behavior, indicating improved back contact. The solar cells prepared with the NA and NP etching processes yielded >10% solar cell efficiency. The CdTe solar cell homogeneity was improved by the NA etching method.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-015-3816-3</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemicals ; Chemistry and Materials Science ; Electricity ; Electronics and Microelectronics ; Instrumentation ; Materials Science ; Optical and Electronic Materials ; Photovoltaic cells ; Solid State Physics</subject><ispartof>Journal of electronic materials, 2015-10, Vol.44 (10), p.3327-3333</ispartof><rights>The Minerals, Metals & Materials Society 2015</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c386t-317134e125bd9fbe41ddee96802a2ebb08e2131295b80e826b6e0a7c47629f3d3</citedby><cites>FETCH-LOGICAL-c386t-317134e125bd9fbe41ddee96802a2ebb08e2131295b80e826b6e0a7c47629f3d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-015-3816-3$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-015-3816-3$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Han, Jun-feng</creatorcontrib><creatorcontrib>Krishnakumar, V.</creatorcontrib><creatorcontrib>Schimper, H.-J.</creatorcontrib><creatorcontrib>Cha, Li-mei</creatorcontrib><creatorcontrib>Liao, Cheng</creatorcontrib><title>Investigation of Structural, Chemical, and Electrical Properties of CdTe/Back Contact Interface by TEM and XPS</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>CdTe solar cell back contact preparation usually includes a chemical etching process which helps to obtain a Te-rich
p
-doped CdTe surface. In this work we compared the influence of two different etching solutions [nitric–phosphoric (NP) and nitric–acetic acid (NA)] on the CdTe surface. Transmission electron microscopy indicated that a Te-rich layer was formed on the surface of polycrystalline CdTe films after the etching process. The layer thickness was 80 nm and 10 nm for NP and NA etching solutions, respectively. In addition, the images showed that the influence of the etching solution was preferentially along the grain boundaries. The chemical properties of the etched CdTe surface were studied by using x-ray photoelectron spectroscopy. The nitric–phosphoric acid yielded a relatively thicker Te-rich layer on the CdTe surface. On the other hand, the
J
–
V
properties of the solar cells prepared using nitric–acetic acid showed no rollover behavior, indicating improved back contact. The solar cells prepared with the NA and NP etching processes yielded >10% solar cell efficiency. The CdTe solar cell homogeneity was improved by the NA etching method.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemicals</subject><subject>Chemistry and Materials Science</subject><subject>Electricity</subject><subject>Electronics and Microelectronics</subject><subject>Instrumentation</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Photovoltaic cells</subject><subject>Solid State Physics</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>BENPR</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp1kMFOwzAMhiMEEmPwANwicaUsTto0O0I1YNIQkzak3aI0dUfH1o4kRdrb0zIOXDjZlr7Pln9CroHdAWPpyANIGUcMkkgokJE4IQNIYhGBkqtTMmBCQpRwkZyTC-83rANBwYDU0_oLfajWJlRNTZuSLoJrbWid2d7S7B13le07Uxd0skUbXD_TuWv26EKFvleyYomjB2M_aNbUwdhAp3VAVxqLND_Q5eTlx1_NF5fkrDRbj1e_dUjeHifL7DmavT5Ns_tZZIWSIRKQgogReJIX4zLHGIoCcSwV44ZjnjOFHATwcZIrhorLXCIzqY1TycelKMSQ3Bz37l3z2XYP6k3Turo7qSFlKlU8Bt5RcKSsa7x3WOq9q3bGHTQw3ceqj7HqLi3dx6pF5_Cj4zu2XqP7s_lf6RtMSHl3</recordid><startdate>20151001</startdate><enddate>20151001</enddate><creator>Han, Jun-feng</creator><creator>Krishnakumar, V.</creator><creator>Schimper, H.-J.</creator><creator>Cha, Li-mei</creator><creator>Liao, Cheng</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope></search><sort><creationdate>20151001</creationdate><title>Investigation of Structural, Chemical, and Electrical Properties of CdTe/Back Contact Interface by TEM and XPS</title><author>Han, Jun-feng ; Krishnakumar, V. ; Schimper, H.-J. ; Cha, Li-mei ; Liao, Cheng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c386t-317134e125bd9fbe41ddee96802a2ebb08e2131295b80e826b6e0a7c47629f3d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemicals</topic><topic>Chemistry and Materials Science</topic><topic>Electricity</topic><topic>Electronics and Microelectronics</topic><topic>Instrumentation</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Photovoltaic cells</topic><topic>Solid State Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Han, Jun-feng</creatorcontrib><creatorcontrib>Krishnakumar, V.</creatorcontrib><creatorcontrib>Schimper, H.-J.</creatorcontrib><creatorcontrib>Cha, Li-mei</creatorcontrib><creatorcontrib>Liao, Cheng</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Han, Jun-feng</au><au>Krishnakumar, V.</au><au>Schimper, H.-J.</au><au>Cha, Li-mei</au><au>Liao, Cheng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of Structural, Chemical, and Electrical Properties of CdTe/Back Contact Interface by TEM and XPS</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2015-10-01</date><risdate>2015</risdate><volume>44</volume><issue>10</issue><spage>3327</spage><epage>3333</epage><pages>3327-3333</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><abstract>CdTe solar cell back contact preparation usually includes a chemical etching process which helps to obtain a Te-rich
p
-doped CdTe surface. In this work we compared the influence of two different etching solutions [nitric–phosphoric (NP) and nitric–acetic acid (NA)] on the CdTe surface. Transmission electron microscopy indicated that a Te-rich layer was formed on the surface of polycrystalline CdTe films after the etching process. The layer thickness was 80 nm and 10 nm for NP and NA etching solutions, respectively. In addition, the images showed that the influence of the etching solution was preferentially along the grain boundaries. The chemical properties of the etched CdTe surface were studied by using x-ray photoelectron spectroscopy. The nitric–phosphoric acid yielded a relatively thicker Te-rich layer on the CdTe surface. On the other hand, the
J
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properties of the solar cells prepared using nitric–acetic acid showed no rollover behavior, indicating improved back contact. The solar cells prepared with the NA and NP etching processes yielded >10% solar cell efficiency. The CdTe solar cell homogeneity was improved by the NA etching method.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-015-3816-3</doi><tpages>7</tpages></addata></record> |
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| subjects | Characterization and Evaluation of Materials Chemicals Chemistry and Materials Science Electricity Electronics and Microelectronics Instrumentation Materials Science Optical and Electronic Materials Photovoltaic cells Solid State Physics |
| title | Investigation of Structural, Chemical, and Electrical Properties of CdTe/Back Contact Interface by TEM and XPS |
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