Si and InGaAs Spatial Wavefunction-Switched (SWS) FETs with II–VI Gate Insulators: An Approach to the Design and Integration of Two-Bit SRAMs and Binary CMOS Logic

Electron wavefunctions are switched spatially from one quantum well to another by varying the gate voltage V g in spatial wavefunction-switched (SWS) field-effect transistors (FETs), which comprise two or more coupled quantum wells serving as the transport channel. This is shown for Si/SiGe and InGa...

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Veröffentlicht in:	Journal of electronic materials 2015-09, Vol.44 (9), p.3108-3115
Hauptverfasser:	Jain, F., Chan, P.-Y., Lingalugari, M., Kondo, J., Suarez, E., Gogna, P., Chandy, J., Heller, E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Chemistry and Materials Science CMOS Electronics and Microelectronics Instrumentation Materials Science Optical and Electronic Materials Random access memory Solid State Physics Transistors
Online-Zugang:	Volltext
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