Efficient Visible-Light-Driven Z-Scheme Overall Water Splitting Using a MgTa2O6−xNy /TaON Heterostructure Photocatalyst for H2 Evolution

An (oxy)nitride‐based heterostructure for powdered Z‐scheme overall water splitting is presented. Compared with the single MgTa2O6−xNy or TaON photocatalyst, a MgTa2O6−xNy /TaON heterostructure fabricated by a simple one‐pot nitridation route was demonstrated to effectively suppress the recombinatio...

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Veröffentlicht in:Angewandte Chemie International Edition 2015-07, Vol.54 (29), p.8498-8501
Hauptverfasser: Chen, Shanshan, Qi, Yu, Hisatomi, Takashi, Ding, Qian, Asai, Tomohiro, Li, Zheng, Ma, Su Su Khine, Zhang, Fuxiang, Domen, Kazunari, Li, Can
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Sprache:eng
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Zusammenfassung:An (oxy)nitride‐based heterostructure for powdered Z‐scheme overall water splitting is presented. Compared with the single MgTa2O6−xNy or TaON photocatalyst, a MgTa2O6−xNy /TaON heterostructure fabricated by a simple one‐pot nitridation route was demonstrated to effectively suppress the recombination of carriers by efficient spatial charge separation and decreased defect density. By employing Pt‐loaded MgTa2O6−xNy /TaON as a H2‐evolving photocatalyst, a Z‐scheme overall water splitting system with an apparent quantum efficiency (AQE) of 6.8 % at 420 nm was constructed (PtOx‐WO3 and IO3−/I− pairs were used as an O2‐evolving photocatalyst and a redox mediator, respectively), the activity of which is circa 7 or 360 times of that using Pt‐TaON or Pt‐MgTa2O6−xNy as a H2‐evolving photocatalyst, respectively. To the best of our knowledge, this is the highest AQE among the powdered Z‐scheme overall water splitting systems ever reported. A MgTa2O6−xNy/TaON heterostructure, fabricated by a one‐pot nitridation strategy, effectively suppresses the recombination of carriers by efficient spatial charge separation and decreased defect density. By employing Pt‐loaded MgTa2O6−xNy/TaON as a H2‐evolving photocatalyst, a highly efficient Z‐scheme overall water splitting system with an apparent quantum efficiency (AQE) of 6.8 % at 420 nm was constructed.
ISSN:1433-7851
1521-3773
DOI:10.1002/anie.201502686