The Study of Electronic Structure and Optical Properties of 2H-SiC
Electronic structure and optical properties of 2H-SiC are calculated by the first-principles calculation based on density functional theory, thus to give out the relation of electronic structure and optical properties of 2H-SiC material in theory. It is theoretically predicated that the 2H-SiC is an...
Gespeichert in:
| Veröffentlicht in: | Applied Mechanics and Materials 2014-05, Vol.556-562, p.535-538 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 538 |
|---|---|
| container_issue | |
| container_start_page | 535 |
| container_title | Applied Mechanics and Materials |
| container_volume | 556-562 |
| creator | Ruan, Xing Xiang Zhang, Wei Hu Zhang, Fu Chun Cui, Hong Wei |
| description | Electronic structure and optical properties of 2H-SiC are calculated by the first-principles calculation based on density functional theory, thus to give out the relation of electronic structure and optical properties of 2H-SiC material in theory. It is theoretically predicated that the 2H-SiC is an indirect band gap semiconductor with all valence band maximum located at Γ point in Brillouin zone and conduction band bottom located at M point of Brillouin zone. The optical property of the 2H-SiC for the band-to-band transition is analyzed by using the calculated band structure and density of state. The result of optical properties shows that obvious dielectric peaks appear in 0~10eV which absorb the band edge to correspond to the ultraviolet band. Therefore, 2H-SiC material maybe become the excellent ultraviolet semiconductor material. |
| doi_str_mv | 10.4028/www.scientific.net/AMM.556-562.535 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_1690892811</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3724770331</sourcerecordid><originalsourceid>FETCH-LOGICAL-c303t-995f8462f973e4daf99e0253931f251fea412ec3cc95e5607034aa99be220baf3</originalsourceid><addsrcrecordid>eNqNkNtqAjEQhkMPULV9h4XeFXbNYRM3l2rtARQL2usQ4wQjdtcmWcS3b6yF9rJXAzM_3z98CD0QXJSYVv3D4VAE46COzjpT1BD7w9ms4FzkXNCCM36BOkQImg_Kil6iLsOsYpwQLq6-DziXjIkb1A1hi7EoSVl10Gi5gWwR2_Uxa2w22YGJvqmdSTvfmth6yHS9zub76IzeZW--2YOPDsIpTl_yhRvfomurdwHufmYPvT9NluOXfDp_fh0Pp7lJn8RcSm6rUlArBwzKtbZSAqacSUYs5cSCLgkFw4yRHLjAA8xKraVcAaV4pS3rofszd--bzxZCVNum9XWqVERIXElaEZJSo3PK-CYED1btvfvQ_qgIVieRKolUvyJVEqmSSJVEqiRSJZEJ8niGRK_rEMFs_nT9H_MFZwqCtg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1690892811</pqid></control><display><type>article</type><title>The Study of Electronic Structure and Optical Properties of 2H-SiC</title><source>Scientific.net Journals</source><creator>Ruan, Xing Xiang ; Zhang, Wei Hu ; Zhang, Fu Chun ; Cui, Hong Wei</creator><creatorcontrib>Ruan, Xing Xiang ; Zhang, Wei Hu ; Zhang, Fu Chun ; Cui, Hong Wei</creatorcontrib><description>Electronic structure and optical properties of 2H-SiC are calculated by the first-principles calculation based on density functional theory, thus to give out the relation of electronic structure and optical properties of 2H-SiC material in theory. It is theoretically predicated that the 2H-SiC is an indirect band gap semiconductor with all valence band maximum located at Γ point in Brillouin zone and conduction band bottom located at M point of Brillouin zone. The optical property of the 2H-SiC for the band-to-band transition is analyzed by using the calculated band structure and density of state. The result of optical properties shows that obvious dielectric peaks appear in 0~10eV which absorb the band edge to correspond to the ultraviolet band. Therefore, 2H-SiC material maybe become the excellent ultraviolet semiconductor material.</description><identifier>ISSN: 1660-9336</identifier><identifier>ISSN: 1662-7482</identifier><identifier>ISBN: 3038351156</identifier><identifier>ISBN: 9783038351153</identifier><identifier>EISSN: 1662-7482</identifier><identifier>DOI: 10.4028/www.scientific.net/AMM.556-562.535</identifier><language>eng</language><publisher>Zurich: Trans Tech Publications Ltd</publisher><ispartof>Applied Mechanics and Materials, 2014-05, Vol.556-562, p.535-538</ispartof><rights>2014 Trans Tech Publications Ltd</rights><rights>Copyright Trans Tech Publications Ltd. May 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c303t-995f8462f973e4daf99e0253931f251fea412ec3cc95e5607034aa99be220baf3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/3207?width=600</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Ruan, Xing Xiang</creatorcontrib><creatorcontrib>Zhang, Wei Hu</creatorcontrib><creatorcontrib>Zhang, Fu Chun</creatorcontrib><creatorcontrib>Cui, Hong Wei</creatorcontrib><title>The Study of Electronic Structure and Optical Properties of 2H-SiC</title><title>Applied Mechanics and Materials</title><description>Electronic structure and optical properties of 2H-SiC are calculated by the first-principles calculation based on density functional theory, thus to give out the relation of electronic structure and optical properties of 2H-SiC material in theory. It is theoretically predicated that the 2H-SiC is an indirect band gap semiconductor with all valence band maximum located at Γ point in Brillouin zone and conduction band bottom located at M point of Brillouin zone. The optical property of the 2H-SiC for the band-to-band transition is analyzed by using the calculated band structure and density of state. The result of optical properties shows that obvious dielectric peaks appear in 0~10eV which absorb the band edge to correspond to the ultraviolet band. Therefore, 2H-SiC material maybe become the excellent ultraviolet semiconductor material.</description><issn>1660-9336</issn><issn>1662-7482</issn><issn>1662-7482</issn><isbn>3038351156</isbn><isbn>9783038351153</isbn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNqNkNtqAjEQhkMPULV9h4XeFXbNYRM3l2rtARQL2usQ4wQjdtcmWcS3b6yF9rJXAzM_3z98CD0QXJSYVv3D4VAE46COzjpT1BD7w9ms4FzkXNCCM36BOkQImg_Kil6iLsOsYpwQLq6-DziXjIkb1A1hi7EoSVl10Gi5gWwR2_Uxa2w22YGJvqmdSTvfmth6yHS9zub76IzeZW--2YOPDsIpTl_yhRvfomurdwHufmYPvT9NluOXfDp_fh0Pp7lJn8RcSm6rUlArBwzKtbZSAqacSUYs5cSCLgkFw4yRHLjAA8xKraVcAaV4pS3rofszd--bzxZCVNum9XWqVERIXElaEZJSo3PK-CYED1btvfvQ_qgIVieRKolUvyJVEqmSSJVEqiRSJZEJ8niGRK_rEMFs_nT9H_MFZwqCtg</recordid><startdate>20140501</startdate><enddate>20140501</enddate><creator>Ruan, Xing Xiang</creator><creator>Zhang, Wei Hu</creator><creator>Zhang, Fu Chun</creator><creator>Cui, Hong Wei</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7TB</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BFMQW</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>KR7</scope><scope>L6V</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope></search><sort><creationdate>20140501</creationdate><title>The Study of Electronic Structure and Optical Properties of 2H-SiC</title><author>Ruan, Xing Xiang ; Zhang, Wei Hu ; Zhang, Fu Chun ; Cui, Hong Wei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c303t-995f8462f973e4daf99e0253931f251fea412ec3cc95e5607034aa99be220baf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ruan, Xing Xiang</creatorcontrib><creatorcontrib>Zhang, Wei Hu</creatorcontrib><creatorcontrib>Zhang, Fu Chun</creatorcontrib><creatorcontrib>Cui, Hong Wei</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central</collection><collection>Continental Europe Database</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Civil Engineering Abstracts</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><jtitle>Applied Mechanics and Materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ruan, Xing Xiang</au><au>Zhang, Wei Hu</au><au>Zhang, Fu Chun</au><au>Cui, Hong Wei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The Study of Electronic Structure and Optical Properties of 2H-SiC</atitle><jtitle>Applied Mechanics and Materials</jtitle><date>2014-05-01</date><risdate>2014</risdate><volume>556-562</volume><spage>535</spage><epage>538</epage><pages>535-538</pages><issn>1660-9336</issn><issn>1662-7482</issn><eissn>1662-7482</eissn><isbn>3038351156</isbn><isbn>9783038351153</isbn><abstract>Electronic structure and optical properties of 2H-SiC are calculated by the first-principles calculation based on density functional theory, thus to give out the relation of electronic structure and optical properties of 2H-SiC material in theory. It is theoretically predicated that the 2H-SiC is an indirect band gap semiconductor with all valence band maximum located at Γ point in Brillouin zone and conduction band bottom located at M point of Brillouin zone. The optical property of the 2H-SiC for the band-to-band transition is analyzed by using the calculated band structure and density of state. The result of optical properties shows that obvious dielectric peaks appear in 0~10eV which absorb the band edge to correspond to the ultraviolet band. Therefore, 2H-SiC material maybe become the excellent ultraviolet semiconductor material.</abstract><cop>Zurich</cop><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/AMM.556-562.535</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1660-9336 |
| ispartof | Applied Mechanics and Materials, 2014-05, Vol.556-562, p.535-538 |
| issn | 1660-9336 1662-7482 1662-7482 |
| language | eng |
| recordid | cdi_proquest_journals_1690892811 |
| source | Scientific.net Journals |
| title | The Study of Electronic Structure and Optical Properties of 2H-SiC |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T11%3A34%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20Study%20of%20Electronic%20Structure%20and%20Optical%20Properties%20of%202H-SiC&rft.jtitle=Applied%20Mechanics%20and%20Materials&rft.au=Ruan,%20Xing%20Xiang&rft.date=2014-05-01&rft.volume=556-562&rft.spage=535&rft.epage=538&rft.pages=535-538&rft.issn=1660-9336&rft.eissn=1662-7482&rft.isbn=3038351156&rft.isbn_list=9783038351153&rft_id=info:doi/10.4028/www.scientific.net/AMM.556-562.535&rft_dat=%3Cproquest_cross%3E3724770331%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1690892811&rft_id=info:pmid/&rfr_iscdi=true |