Inhomogeneity-Induced Carrier Transport of Chemical Vapor Deposited Graphene on HfO^sub 2^ at Low Temperatures

We have investigated carrier transport properties of chemical vapor deposited graphene placed on HfO.../Si substrate. Due to the increased charged impurity scattering originating from the HfO... substrate, the mobility of the graphene on HfO... substrate was about 15 times lower than that on SiO......

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Veröffentlicht in:Journal of the Physical Society of Japan 2013-01, Vol.82 (1), p.1
Hauptverfasser: Kelekçi, Özgür, W Khalil, Hafiz M, Hwang, Cheol S, Noh, Hwayong
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Sprache:eng
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