High density and low resistivity AZO:Si ceramic targets fabricated by slip casting and pressureless sintering using submicron powders
The aluminum-doped ZnO ceramic targets with 0.05 % silica doping (AZO:Si) were fabricated by slip casting and pressureless sintering using submicron ZnO and Al 2 O 3 powders. The structure and properties of the AZO:Si targets were investigated at a temperature range of 1200–1450 °C. The structure, m...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2015-06, Vol.26 (6), p.3819-3826 |
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| container_title | Journal of materials science. Materials in electronics |
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| creator | Xu, Ji-wen Yang, Zu-pei Wang, Hua Yang, Ling Yuan, Changlai |
| description | The aluminum-doped ZnO ceramic targets with 0.05 % silica doping (AZO:Si) were fabricated by slip casting and pressureless sintering using submicron ZnO and Al
2
O
3
powders. The structure and properties of the AZO:Si targets were investigated at a temperature range of 1200–1450 °C. The structure, morphology, and electrical property of the AZO:Si targets were characterized by XRD, SEM and Hall effect. The results show that the silica can used as sintering aids to improve the density, and as donor to increase the conductivity of the AZO targets. The low sintering activity of submicron powders can be compensated by sintering aids and slip casting process. The AZO:Si targets exhibit higher density and conductivity than the pure AZO targets. Those targets fabricated by slip casting show homogeneous structure and large dimension. |
| doi_str_mv | 10.1007/s10854-015-2908-4 |
| format | Article |
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2
O
3
powders. The structure and properties of the AZO:Si targets were investigated at a temperature range of 1200–1450 °C. The structure, morphology, and electrical property of the AZO:Si targets were characterized by XRD, SEM and Hall effect. The results show that the silica can used as sintering aids to improve the density, and as donor to increase the conductivity of the AZO targets. The low sintering activity of submicron powders can be compensated by sintering aids and slip casting process. The AZO:Si targets exhibit higher density and conductivity than the pure AZO targets. Those targets fabricated by slip casting show homogeneous structure and large dimension.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-015-2908-4</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Materials Science ; Optical and Electronic Materials</subject><ispartof>Journal of materials science. Materials in electronics, 2015-06, Vol.26 (6), p.3819-3826</ispartof><rights>Springer Science+Business Media New York 2015</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c386t-88e28686423019b9a28599bbbb8e3d2582843c01a22bdc6b891e3fcd99497b033</citedby><cites>FETCH-LOGICAL-c386t-88e28686423019b9a28599bbbb8e3d2582843c01a22bdc6b891e3fcd99497b033</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-015-2908-4$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-015-2908-4$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Xu, Ji-wen</creatorcontrib><creatorcontrib>Yang, Zu-pei</creatorcontrib><creatorcontrib>Wang, Hua</creatorcontrib><creatorcontrib>Yang, Ling</creatorcontrib><creatorcontrib>Yuan, Changlai</creatorcontrib><title>High density and low resistivity AZO:Si ceramic targets fabricated by slip casting and pressureless sintering using submicron powders</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>The aluminum-doped ZnO ceramic targets with 0.05 % silica doping (AZO:Si) were fabricated by slip casting and pressureless sintering using submicron ZnO and Al
2
O
3
powders. The structure and properties of the AZO:Si targets were investigated at a temperature range of 1200–1450 °C. The structure, morphology, and electrical property of the AZO:Si targets were characterized by XRD, SEM and Hall effect. The results show that the silica can used as sintering aids to improve the density, and as donor to increase the conductivity of the AZO targets. The low sintering activity of submicron powders can be compensated by sintering aids and slip casting process. The AZO:Si targets exhibit higher density and conductivity than the pure AZO targets. Those targets fabricated by slip casting show homogeneous structure and large dimension.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp1kE1OwzAQhS0EEqVwAHaWWBv8l8RmV1VAkSp1AUiIjeUkTnGVJsGTUPUA3BuHsmCDFx5p_N4344fQJaPXjNLsBhhViSSUJYRrqog8QhOWZIJIxV-P0YTqJCMy4fwUnQFsKKWpFGqCvhZ-_Y5L14Dv99g2Ja7bHQ4OPPT-c-zN3la3Tx4XLtitL3Bvw9r1gCubB1_Y3pU432OofYcLGz3N-ofSRQQMwdWxYPBN78L4NMB4w5BHVGgb3LW70gU4RyeVrcFd_NYperm_e54vyHL18DifLUkhVNoTpRxXqUolF5TpXFuuEq3zeJQTJU8UV1IUlFnO87JIc6WZE1VRai11llMhpujqwO1C-zE46M2mHUITRxqWKspYmkgdVeygiisCBFeZLvitDXvDqBnTNoe0TUzbjGkbGT384IFu_KgLf8j_mr4BUzOEcA</recordid><startdate>20150601</startdate><enddate>20150601</enddate><creator>Xu, Ji-wen</creator><creator>Yang, Zu-pei</creator><creator>Wang, Hua</creator><creator>Yang, Ling</creator><creator>Yuan, Changlai</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope></search><sort><creationdate>20150601</creationdate><title>High density and low resistivity AZO:Si ceramic targets fabricated by slip casting and pressureless sintering using submicron powders</title><author>Xu, Ji-wen ; Yang, Zu-pei ; Wang, Hua ; Yang, Ling ; Yuan, Changlai</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c386t-88e28686423019b9a28599bbbb8e3d2582843c01a22bdc6b891e3fcd99497b033</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xu, Ji-wen</creatorcontrib><creatorcontrib>Yang, Zu-pei</creatorcontrib><creatorcontrib>Wang, Hua</creatorcontrib><creatorcontrib>Yang, Ling</creatorcontrib><creatorcontrib>Yuan, Changlai</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central</collection><collection>Advanced Technologies & Aerospace Database (1962 - current)</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>ProQuest Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ProQuest advanced technologies & aerospace journals</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Xu, Ji-wen</au><au>Yang, Zu-pei</au><au>Wang, Hua</au><au>Yang, Ling</au><au>Yuan, Changlai</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High density and low resistivity AZO:Si ceramic targets fabricated by slip casting and pressureless sintering using submicron powders</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2015-06-01</date><risdate>2015</risdate><volume>26</volume><issue>6</issue><spage>3819</spage><epage>3826</epage><pages>3819-3826</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>The aluminum-doped ZnO ceramic targets with 0.05 % silica doping (AZO:Si) were fabricated by slip casting and pressureless sintering using submicron ZnO and Al
2
O
3
powders. The structure and properties of the AZO:Si targets were investigated at a temperature range of 1200–1450 °C. The structure, morphology, and electrical property of the AZO:Si targets were characterized by XRD, SEM and Hall effect. The results show that the silica can used as sintering aids to improve the density, and as donor to increase the conductivity of the AZO targets. The low sintering activity of submicron powders can be compensated by sintering aids and slip casting process. The AZO:Si targets exhibit higher density and conductivity than the pure AZO targets. Those targets fabricated by slip casting show homogeneous structure and large dimension.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-015-2908-4</doi><tpages>8</tpages></addata></record> |
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| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Materials Science Optical and Electronic Materials |
| title | High density and low resistivity AZO:Si ceramic targets fabricated by slip casting and pressureless sintering using submicron powders |
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