Self-aligned normally-off metal-oxide-semiconductor n++GaN/InAlN/GaN high electron mobility transistors

Self‐aligned normally‐off n++GaN/InAlN/AlN/GaN MOS HEMTs with a recessed gate show scalable threshold voltage between 1.3 to 3.7 V, which increases with the gate oxide thickness. Al2O3 or HfO2 gate insulators were grown by ALD at 100 °C so that one photoresist mask could be used for the gate recessi...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2015-05, Vol.212 (5), p.1086-1090
Hauptverfasser:	Blaho, M., Gregušová, D., Haščík, Š., Jurkovič, M., Ťapajna, M., Fröhlich, K., Dérer, J., Carlin, J. -F., Grandjean, N., Kuzmík, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	GaN high electron mobility transistors InAlN metal-oxide-semiconductor structures
Online-Zugang:	Volltext
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