Characterization of aluminum oxide films on p-type silicon substrate prepared by glass assisted CO2 laser technique

Aluminum oxide (Al 2 O 3 ) films were deposited on p - type Si 〈100〉 substrate using glass assisted CO 2 laser technique. Aluminum trichloride AlCl 3 and O 2 were used as aluminum and oxygen sources respectively and Ar was used as a carrier gas for AlCl 3 . The films were deposited at different subs...

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Veröffentlicht in:	Indian journal of physics 2014, Vol.88 (1), p.43-47
Hauptverfasser:	Hassan, Y. M., Saied, E. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Astrophysics and Astroparticles Biophysics Carbon dioxide Lasers Original Paper Physics Physics and Astronomy Silicon Substrates Thin films
Online-Zugang:	Volltext
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