Low-Temperature Heteroepitaxial Growth of Single-Domain V-Doped ZnO Films on c-Face Sapphire
High-quality single-domain (ZnO[11–20]//Al 2 O 3 [10–10]) ZnO heteroepitaxial growth on c -face sapphire [Al 2 O 3 (0001)] substrate at low temperature was investigated by vanadium (V) doping at growth temperatures between 150°C and 450°C using radiofrequency (RF) magnetron sputtering. In low-temper...
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| Veröffentlicht in: | Journal of electronic materials 2015-05, Vol.44 (5), p.1351-1356 |
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| container_issue | 5 |
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| container_title | Journal of electronic materials |
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| creator | Chiba, Hiroshi Mori, Tatsuya Kawashima, Tomoyuki Washio, Katsuyoshi |
| description | High-quality single-domain (ZnO[11–20]//Al
2
O
3
[10–10]) ZnO heteroepitaxial growth on
c
-face sapphire [Al
2
O
3
(0001)] substrate at low temperature was investigated by vanadium (V) doping at growth temperatures between 150°C and 450°C using radiofrequency (RF) magnetron sputtering. In low-temperature growth at 150°C and 200°C, 30° twisted domains (ZnO[10–10]//Al
2
O
3
[10–10]) were eliminated and good in-plane crystal orientation was obtained for V doping of about 2 at.% to 3 at.%. Single domains were grown from the early stage. From the changes of surface morphology and growth rate, it was considered that migration during the growth was enhanced due to the increase of the diffusion energy of adatoms, while random nucleation was suppressed. |
| doi_str_mv | 10.1007/s11664-014-3587-2 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_1668003412</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3641862521</sourcerecordid><originalsourceid>FETCH-LOGICAL-c382t-a6c30b65149e96fc20840a27a920220d72982d4f1dd6c210db421f245852f84a3</originalsourceid><addsrcrecordid>eNp1kM9LwzAYhoMoOKd_gLeA52i-_Gp6lOk2YeBhU0SEkLXp1tE2NemY_vd21IMXT997eJ_3gweha6C3QGlyFwGUEoSCIFzqhLATNAIpOAGt3k7RiHIFRDIuz9FFjDtKQYKGEfpY-ANZubp1wXb74PDcdS5415ad_SpthWfBH7ot9gVels2mcuTB17Zs8GsfWpfj9-YZT8uqjtg3OCNTmzm8tG27LYO7RGeFraK7-r1j9DJ9XE3mZPE8e5rcL0jGNeuIVRmnayVBpC5VRcaoFtSyxKaMMkbzhKWa5aKAPFcZA5qvBYOCCaklK7SwfIxuht02-M-9i53Z-X1o-pemt6Ip5QJY34KhlQUfY3CFaUNZ2_BtgJqjRDNINL1Ec5RojgwbmNh3m40Lf5b_hX4Ad7lyoQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1668003412</pqid></control><display><type>article</type><title>Low-Temperature Heteroepitaxial Growth of Single-Domain V-Doped ZnO Films on c-Face Sapphire</title><source>SpringerLink Journals</source><creator>Chiba, Hiroshi ; Mori, Tatsuya ; Kawashima, Tomoyuki ; Washio, Katsuyoshi</creator><creatorcontrib>Chiba, Hiroshi ; Mori, Tatsuya ; Kawashima, Tomoyuki ; Washio, Katsuyoshi</creatorcontrib><description>High-quality single-domain (ZnO[11–20]//Al
2
O
3
[10–10]) ZnO heteroepitaxial growth on
c
-face sapphire [Al
2
O
3
(0001)] substrate at low temperature was investigated by vanadium (V) doping at growth temperatures between 150°C and 450°C using radiofrequency (RF) magnetron sputtering. In low-temperature growth at 150°C and 200°C, 30° twisted domains (ZnO[10–10]//Al
2
O
3
[10–10]) were eliminated and good in-plane crystal orientation was obtained for V doping of about 2 at.% to 3 at.%. Single domains were grown from the early stage. From the changes of surface morphology and growth rate, it was considered that migration during the growth was enhanced due to the increase of the diffusion energy of adatoms, while random nucleation was suppressed.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-014-3587-2</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Electronics and Microelectronics ; Instrumentation ; Low temperature physics ; Materials Science ; Minerals ; Optical and Electronic Materials ; Solid State Physics ; Thin films</subject><ispartof>Journal of electronic materials, 2015-05, Vol.44 (5), p.1351-1356</ispartof><rights>The Minerals, Metals & Materials Society 2014</rights><rights>The Minerals, Metals & Materials Society 2015</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c382t-a6c30b65149e96fc20840a27a920220d72982d4f1dd6c210db421f245852f84a3</citedby><cites>FETCH-LOGICAL-c382t-a6c30b65149e96fc20840a27a920220d72982d4f1dd6c210db421f245852f84a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-014-3587-2$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-014-3587-2$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Chiba, Hiroshi</creatorcontrib><creatorcontrib>Mori, Tatsuya</creatorcontrib><creatorcontrib>Kawashima, Tomoyuki</creatorcontrib><creatorcontrib>Washio, Katsuyoshi</creatorcontrib><title>Low-Temperature Heteroepitaxial Growth of Single-Domain V-Doped ZnO Films on c-Face Sapphire</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>High-quality single-domain (ZnO[11–20]//Al
2
O
3
[10–10]) ZnO heteroepitaxial growth on
c
-face sapphire [Al
2
O
3
(0001)] substrate at low temperature was investigated by vanadium (V) doping at growth temperatures between 150°C and 450°C using radiofrequency (RF) magnetron sputtering. In low-temperature growth at 150°C and 200°C, 30° twisted domains (ZnO[10–10]//Al
2
O
3
[10–10]) were eliminated and good in-plane crystal orientation was obtained for V doping of about 2 at.% to 3 at.%. Single domains were grown from the early stage. From the changes of surface morphology and growth rate, it was considered that migration during the growth was enhanced due to the increase of the diffusion energy of adatoms, while random nucleation was suppressed.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Electronics and Microelectronics</subject><subject>Instrumentation</subject><subject>Low temperature physics</subject><subject>Materials Science</subject><subject>Minerals</subject><subject>Optical and Electronic Materials</subject><subject>Solid State Physics</subject><subject>Thin films</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>BENPR</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp1kM9LwzAYhoMoOKd_gLeA52i-_Gp6lOk2YeBhU0SEkLXp1tE2NemY_vd21IMXT997eJ_3gweha6C3QGlyFwGUEoSCIFzqhLATNAIpOAGt3k7RiHIFRDIuz9FFjDtKQYKGEfpY-ANZubp1wXb74PDcdS5415ad_SpthWfBH7ot9gVels2mcuTB17Zs8GsfWpfj9-YZT8uqjtg3OCNTmzm8tG27LYO7RGeFraK7-r1j9DJ9XE3mZPE8e5rcL0jGNeuIVRmnayVBpC5VRcaoFtSyxKaMMkbzhKWa5aKAPFcZA5qvBYOCCaklK7SwfIxuht02-M-9i53Z-X1o-pemt6Ip5QJY34KhlQUfY3CFaUNZ2_BtgJqjRDNINL1Ec5RojgwbmNh3m40Lf5b_hX4Ad7lyoQ</recordid><startdate>20150501</startdate><enddate>20150501</enddate><creator>Chiba, Hiroshi</creator><creator>Mori, Tatsuya</creator><creator>Kawashima, Tomoyuki</creator><creator>Washio, Katsuyoshi</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PHGZM</scope><scope>PHGZT</scope><scope>PKEHL</scope><scope>PQEST</scope><scope>PQGLB</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope></search><sort><creationdate>20150501</creationdate><title>Low-Temperature Heteroepitaxial Growth of Single-Domain V-Doped ZnO Films on c-Face Sapphire</title><author>Chiba, Hiroshi ; Mori, Tatsuya ; Kawashima, Tomoyuki ; Washio, Katsuyoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c382t-a6c30b65149e96fc20840a27a920220d72982d4f1dd6c210db421f245852f84a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Electronics and Microelectronics</topic><topic>Instrumentation</topic><topic>Low temperature physics</topic><topic>Materials Science</topic><topic>Minerals</topic><topic>Optical and Electronic Materials</topic><topic>Solid State Physics</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chiba, Hiroshi</creatorcontrib><creatorcontrib>Mori, Tatsuya</creatorcontrib><creatorcontrib>Kawashima, Tomoyuki</creatorcontrib><creatorcontrib>Washio, Katsuyoshi</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest Central (New)</collection><collection>ProQuest One Academic (New)</collection><collection>ProQuest One Academic Middle East (New)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Applied & Life Sciences</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chiba, Hiroshi</au><au>Mori, Tatsuya</au><au>Kawashima, Tomoyuki</au><au>Washio, Katsuyoshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low-Temperature Heteroepitaxial Growth of Single-Domain V-Doped ZnO Films on c-Face Sapphire</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2015-05-01</date><risdate>2015</risdate><volume>44</volume><issue>5</issue><spage>1351</spage><epage>1356</epage><pages>1351-1356</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><abstract>High-quality single-domain (ZnO[11–20]//Al
2
O
3
[10–10]) ZnO heteroepitaxial growth on
c
-face sapphire [Al
2
O
3
(0001)] substrate at low temperature was investigated by vanadium (V) doping at growth temperatures between 150°C and 450°C using radiofrequency (RF) magnetron sputtering. In low-temperature growth at 150°C and 200°C, 30° twisted domains (ZnO[10–10]//Al
2
O
3
[10–10]) were eliminated and good in-plane crystal orientation was obtained for V doping of about 2 at.% to 3 at.%. Single domains were grown from the early stage. From the changes of surface morphology and growth rate, it was considered that migration during the growth was enhanced due to the increase of the diffusion energy of adatoms, while random nucleation was suppressed.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s11664-014-3587-2</doi><tpages>6</tpages></addata></record> |
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| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Electronics and Microelectronics Instrumentation Low temperature physics Materials Science Minerals Optical and Electronic Materials Solid State Physics Thin films |
| title | Low-Temperature Heteroepitaxial Growth of Single-Domain V-Doped ZnO Films on c-Face Sapphire |
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