AlGaN/AlN-GaN-SL HEMTs with Multiple 2DEG Channels

We report on a multichannel approach for AlGaN/GaN high-electron-mobility transistors (HEMTs) to increase the carrier mobility in the low and high sheet carrier concentration regimes. Between the AlGaN barrier and GaN buffer, alternating thin layers of AlN and GaN were inserted to create multiple tw...

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Veröffentlicht in:	Journal of electronic materials 2015-05, Vol.44 (5), p.1263-1267
Hauptverfasser:	Wille, Ada, Yacoub, Hady, Debald, Arne, Kalisch, Holger, Vescan, Andrei
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Chemistry and Materials Science Electronics and Microelectronics Electrons Instrumentation Materials Science Optical and Electronic Materials Solid State Physics Transistors
Online-Zugang:	Volltext
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