Enhanced Light Extraction Efficiency of GaN-Based Hybrid Nanorods Light-Emitting Diodes

High light extraction GaN-based light-emitting diodes (LEDs) with a hybrid structure of straight nanorods located in an array of microholes have been successfully demonstrated. Via the nanoimprint lithography and photolithography techniques, high aspect-ratio light-guiding InGaN/GaN nanorods can be...

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Veröffentlicht in:	IEEE journal of selected topics in quantum electronics 2015-07, Vol.21 (4), p.354-360
Hauptverfasser:	Huang, Jhih-Kai, Liu, Che-Yu, Chen, Tzi-Pei, Huang, Hung-Wen, Lai, Fang-I, Lee, Po-Tsung, Lin, Chung-Hsiang, Chang, Chun-Yen, Kao, Tsung Sheng, Kuo, Hao-Chung
Format:	Artikel
Sprache:	eng
Schlagworte:	Arrays Devices Extraction Gallium nitride Hybrid structures Indium gallium nitrides Light emitting diodes Lithography Microholes Nanorods Nanoscale devices Nanotechnology Optoelectronic devices Photolithography Photonics Quantum well devices
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