Enhancement of photoresponsive electrical characteristics of multilayer MoS^sub 2^ transistors using rubrene patches
Multilayer MoS^sub 2^ is a promising active material for sensing, energy harvesting, and optoelectronic devices owing to its intriguing tunable electronic band structure. However, its optoelectronic applications have been limited due to its indirect band gap nature. In this study, we fabricated a ne...
Gespeichert in:
| Veröffentlicht in: | Nano research 2015-03, Vol.8 (3), p.790 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 3 |
| container_start_page | 790 |
| container_title | Nano research |
| container_volume | 8 |
| creator | Cho, Eun Hei Song, Won Geun Park, Cheol Joon Kim, Jeongyong Kim, Sunkook Joo, Jinsoo |
| description | Multilayer MoS^sub 2^ is a promising active material for sensing, energy harvesting, and optoelectronic devices owing to its intriguing tunable electronic band structure. However, its optoelectronic applications have been limited due to its indirect band gap nature. In this study, we fabricated a new type of phototransistor using multilayer MoS^sub 2^ crystal hybridized with p-type organic semiconducting rubrene patches. Owing to the outstanding photophysical properties of rubrene, the device characteristics such as charge mobility and photoresponsivity were considerably enhanced to an extent depending on the thickness of the rubrene patches. The enhanced photoresponsive conductance was analyzed in terms of the charge transfer doping effect, validated by the results of the nanoscale laser confocal microscope photoluminescence (PL) and time-resolved PL measurements. [Figure not available: see fulltext.] |
| doi_str_mv | 10.1007/s12274-014-0561-5 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_1662387690</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3621284721</sourcerecordid><originalsourceid>FETCH-proquest_journals_16623876903</originalsourceid><addsrcrecordid>eNqNTE1LAzEUDKJg_fgB3h54Xk3SbXb3LBUvnuq5JQ2vbkqarO-9CP57V9C7A8MMzIdSd0Y_GK27RzbWdm2jzcyVM83qTC3MMPSNnnH-541tL9UV81FrZ03bL5Ss8-hzwBNmgXKAaSxSCHkqmeMnAiYMQjH4BGH05IMgRZYY-Kd9qkli8l9I8Fo2W657sFsQ8vOY5x-GyjG_A9U9YUaYvIQR-UZdHHxivP3Va3X_vH57emkmKh8VWXbHUinP0c44Z5d95wa9_F_rG7AKVII</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1662387690</pqid></control><display><type>article</type><title>Enhancement of photoresponsive electrical characteristics of multilayer MoS^sub 2^ transistors using rubrene patches</title><source>SpringerNature Journals</source><creator>Cho, Eun Hei ; Song, Won Geun ; Park, Cheol Joon ; Kim, Jeongyong ; Kim, Sunkook ; Joo, Jinsoo</creator><creatorcontrib>Cho, Eun Hei ; Song, Won Geun ; Park, Cheol Joon ; Kim, Jeongyong ; Kim, Sunkook ; Joo, Jinsoo</creatorcontrib><description>Multilayer MoS^sub 2^ is a promising active material for sensing, energy harvesting, and optoelectronic devices owing to its intriguing tunable electronic band structure. However, its optoelectronic applications have been limited due to its indirect band gap nature. In this study, we fabricated a new type of phototransistor using multilayer MoS^sub 2^ crystal hybridized with p-type organic semiconducting rubrene patches. Owing to the outstanding photophysical properties of rubrene, the device characteristics such as charge mobility and photoresponsivity were considerably enhanced to an extent depending on the thickness of the rubrene patches. The enhanced photoresponsive conductance was analyzed in terms of the charge transfer doping effect, validated by the results of the nanoscale laser confocal microscope photoluminescence (PL) and time-resolved PL measurements. [Figure not available: see fulltext.]</description><identifier>ISSN: 1998-0124</identifier><identifier>EISSN: 1998-0000</identifier><identifier>DOI: 10.1007/s12274-014-0561-5</identifier><language>eng</language><publisher>Beijing: Springer Nature B.V</publisher><subject>Electrons ; Graphene ; Lasers ; Transistors</subject><ispartof>Nano research, 2015-03, Vol.8 (3), p.790</ispartof><rights>Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2015</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Cho, Eun Hei</creatorcontrib><creatorcontrib>Song, Won Geun</creatorcontrib><creatorcontrib>Park, Cheol Joon</creatorcontrib><creatorcontrib>Kim, Jeongyong</creatorcontrib><creatorcontrib>Kim, Sunkook</creatorcontrib><creatorcontrib>Joo, Jinsoo</creatorcontrib><title>Enhancement of photoresponsive electrical characteristics of multilayer MoS^sub 2^ transistors using rubrene patches</title><title>Nano research</title><description>Multilayer MoS^sub 2^ is a promising active material for sensing, energy harvesting, and optoelectronic devices owing to its intriguing tunable electronic band structure. However, its optoelectronic applications have been limited due to its indirect band gap nature. In this study, we fabricated a new type of phototransistor using multilayer MoS^sub 2^ crystal hybridized with p-type organic semiconducting rubrene patches. Owing to the outstanding photophysical properties of rubrene, the device characteristics such as charge mobility and photoresponsivity were considerably enhanced to an extent depending on the thickness of the rubrene patches. The enhanced photoresponsive conductance was analyzed in terms of the charge transfer doping effect, validated by the results of the nanoscale laser confocal microscope photoluminescence (PL) and time-resolved PL measurements. [Figure not available: see fulltext.]</description><subject>Electrons</subject><subject>Graphene</subject><subject>Lasers</subject><subject>Transistors</subject><issn>1998-0124</issn><issn>1998-0000</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><recordid>eNqNTE1LAzEUDKJg_fgB3h54Xk3SbXb3LBUvnuq5JQ2vbkqarO-9CP57V9C7A8MMzIdSd0Y_GK27RzbWdm2jzcyVM83qTC3MMPSNnnH-541tL9UV81FrZ03bL5Ss8-hzwBNmgXKAaSxSCHkqmeMnAiYMQjH4BGH05IMgRZYY-Kd9qkli8l9I8Fo2W657sFsQ8vOY5x-GyjG_A9U9YUaYvIQR-UZdHHxivP3Va3X_vH57emkmKh8VWXbHUinP0c44Z5d95wa9_F_rG7AKVII</recordid><startdate>20150301</startdate><enddate>20150301</enddate><creator>Cho, Eun Hei</creator><creator>Song, Won Geun</creator><creator>Park, Cheol Joon</creator><creator>Kim, Jeongyong</creator><creator>Kim, Sunkook</creator><creator>Joo, Jinsoo</creator><general>Springer Nature B.V</general><scope>3V.</scope><scope>7QF</scope><scope>7QO</scope><scope>7QQ</scope><scope>7SE</scope><scope>7SR</scope><scope>7U5</scope><scope>7X7</scope><scope>7XB</scope><scope>8AO</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FH</scope><scope>8FI</scope><scope>8FJ</scope><scope>8FK</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BBNVY</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>BHPHI</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>FR3</scope><scope>FYUFA</scope><scope>GHDGH</scope><scope>GNUQQ</scope><scope>H8G</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>K9.</scope><scope>KB.</scope><scope>L7M</scope><scope>LK8</scope><scope>M0S</scope><scope>M7P</scope><scope>P64</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope></search><sort><creationdate>20150301</creationdate><title>Enhancement of photoresponsive electrical characteristics of multilayer MoS^sub 2^ transistors using rubrene patches</title><author>Cho, Eun Hei ; Song, Won Geun ; Park, Cheol Joon ; Kim, Jeongyong ; Kim, Sunkook ; Joo, Jinsoo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_16623876903</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Electrons</topic><topic>Graphene</topic><topic>Lasers</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cho, Eun Hei</creatorcontrib><creatorcontrib>Song, Won Geun</creatorcontrib><creatorcontrib>Park, Cheol Joon</creatorcontrib><creatorcontrib>Kim, Jeongyong</creatorcontrib><creatorcontrib>Kim, Sunkook</creatorcontrib><creatorcontrib>Joo, Jinsoo</creatorcontrib><collection>ProQuest Central (Corporate)</collection><collection>Aluminium Industry Abstracts</collection><collection>Biotechnology Research Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Health & Medical Collection</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>ProQuest Pharma Collection</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Natural Science Collection</collection><collection>Hospital Premium Collection</collection><collection>Hospital Premium Collection (Alumni Edition)</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>Biological Science Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>Natural Science Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>Engineering Research Database</collection><collection>Health Research Premium Collection</collection><collection>Health Research Premium Collection (Alumni)</collection><collection>ProQuest Central Student</collection><collection>Copper Technical Reference Library</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>ProQuest Health & Medical Complete (Alumni)</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ProQuest Biological Science Collection</collection><collection>Health & Medical Collection (Alumni Edition)</collection><collection>Biological Science Database</collection><collection>Biotechnology and BioEngineering Abstracts</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><jtitle>Nano research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cho, Eun Hei</au><au>Song, Won Geun</au><au>Park, Cheol Joon</au><au>Kim, Jeongyong</au><au>Kim, Sunkook</au><au>Joo, Jinsoo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhancement of photoresponsive electrical characteristics of multilayer MoS^sub 2^ transistors using rubrene patches</atitle><jtitle>Nano research</jtitle><date>2015-03-01</date><risdate>2015</risdate><volume>8</volume><issue>3</issue><spage>790</spage><pages>790-</pages><issn>1998-0124</issn><eissn>1998-0000</eissn><abstract>Multilayer MoS^sub 2^ is a promising active material for sensing, energy harvesting, and optoelectronic devices owing to its intriguing tunable electronic band structure. However, its optoelectronic applications have been limited due to its indirect band gap nature. In this study, we fabricated a new type of phototransistor using multilayer MoS^sub 2^ crystal hybridized with p-type organic semiconducting rubrene patches. Owing to the outstanding photophysical properties of rubrene, the device characteristics such as charge mobility and photoresponsivity were considerably enhanced to an extent depending on the thickness of the rubrene patches. The enhanced photoresponsive conductance was analyzed in terms of the charge transfer doping effect, validated by the results of the nanoscale laser confocal microscope photoluminescence (PL) and time-resolved PL measurements. [Figure not available: see fulltext.]</abstract><cop>Beijing</cop><pub>Springer Nature B.V</pub><doi>10.1007/s12274-014-0561-5</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1998-0124 |
| ispartof | Nano research, 2015-03, Vol.8 (3), p.790 |
| issn | 1998-0124 1998-0000 |
| language | eng |
| recordid | cdi_proquest_journals_1662387690 |
| source | SpringerNature Journals |
| subjects | Electrons Graphene Lasers Transistors |
| title | Enhancement of photoresponsive electrical characteristics of multilayer MoS^sub 2^ transistors using rubrene patches |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T20%3A35%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Enhancement%20of%20photoresponsive%20electrical%20characteristics%20of%20multilayer%20MoS%5Esub%202%5E%20transistors%20using%20rubrene%20patches&rft.jtitle=Nano%20research&rft.au=Cho,%20Eun%20Hei&rft.date=2015-03-01&rft.volume=8&rft.issue=3&rft.spage=790&rft.pages=790-&rft.issn=1998-0124&rft.eissn=1998-0000&rft_id=info:doi/10.1007/s12274-014-0561-5&rft_dat=%3Cproquest%3E3621284721%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1662387690&rft_id=info:pmid/&rfr_iscdi=true |