Growth of aluminum oxide nanorods using sandwich structures composed of Al and SiOx layers
In this work, we report a simple method for growing aluminum oxide nanorods based on low‐temperature annealing of a sandwich structure composed of a thin Al film sandwiched between two silicon‐rich oxide (SiOx: 0
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Veröffentlicht in: | Physica status solidi. A, Applications and materials science Applications and materials science, 2015-02, Vol.212 (2), p.406-409 |
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container_title | Physica status solidi. A, Applications and materials science |
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creator | Yoon, Jong-Hwan |
description | In this work, we report a simple method for growing aluminum oxide nanorods based on low‐temperature annealing of a sandwich structure composed of a thin Al film sandwiched between two silicon‐rich oxide (SiOx: 0 |
doi_str_mv | 10.1002/pssa.201431141 |
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Aluminum oxide nanorods produced using a typical sandwich structure of SiO1.4(20 nm)/Al(2 nm)/SiO1.4(20 nm)/Si substrate exhibited the features of the mean diameter and length of the nanorods of about 0.3 and 1.7 μm, respectively. A possible growth mechanism is discussed on the basis of the vapor–solid process. The nanorod growth is proposed to be mediated by a vapor–solid mechanism in which the dominant vapor‐phase source of reactants is Al2O/AlO produced by a phase separation of SiOx.</description><identifier>ISSN: 1862-6300</identifier><identifier>EISSN: 1862-6319</identifier><identifier>DOI: 10.1002/pssa.201431141</identifier><language>eng</language><publisher>Weinheim: Blackwell Publishing Ltd</publisher><subject>Al2O3 ; growth ; multilayers ; nanorods ; SiOx</subject><ispartof>Physica status solidi. A, Applications and materials science, 2015-02, Vol.212 (2), p.406-409</ispartof><rights>2015 WILEY-VCH Verlag GmbH & Co. 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Status Solidi A</addtitle><description>In this work, we report a simple method for growing aluminum oxide nanorods based on low‐temperature annealing of a sandwich structure composed of a thin Al film sandwiched between two silicon‐rich oxide (SiOx: 0 < x < 2) layers produced by plasma‐enhanced chemical vapor deposition. Aluminum oxide nanorods produced using a typical sandwich structure of SiO1.4(20 nm)/Al(2 nm)/SiO1.4(20 nm)/Si substrate exhibited the features of the mean diameter and length of the nanorods of about 0.3 and 1.7 μm, respectively. A possible growth mechanism is discussed on the basis of the vapor–solid process. The nanorod growth is proposed to be mediated by a vapor–solid mechanism in which the dominant vapor‐phase source of reactants is Al2O/AlO produced by a phase separation of SiOx.</description><subject>Al2O3</subject><subject>growth</subject><subject>multilayers</subject><subject>nanorods</subject><subject>SiOx</subject><issn>1862-6300</issn><issn>1862-6319</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNo9kN9PwjAQxxujiYi--tzE52F_rdseCSqaENGAYnhpytpKcVtnuwX47x3BcC93l3w_d8kHgFuMBhghcl-HIAcEYUYxZvgM9HDKScQpzs5PM0KX4CqEDUIsZgnugeXYu22zhs5AWbSlrdoSup1VGlayct6pANtgq28YZKW2Nl_D0Pg2b1qvA8xdWbug1YEeFrBLwJmd7mAh99qHa3BhZBH0zX_vg4-nx_noOZpMxy-j4SSyJME4yhA2iJJcUS6JxpQznqcrqZBKUWqMyjmL865QmppYJ0obsspMFq8oo5pJRfvg7ni39u631aERG9f6qnspMI8Zj7MkoV0qO6a2ttB7UXtbSr8XGImDPHGQJ07yxNtsNjxtHRsdWRsavTux0v8IntAkFovXsVh8vj988flSEPoHKQ92ZQ</recordid><startdate>201502</startdate><enddate>201502</enddate><creator>Yoon, Jong-Hwan</creator><general>Blackwell Publishing Ltd</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>201502</creationdate><title>Growth of aluminum oxide nanorods using sandwich structures composed of Al and SiOx layers</title><author>Yoon, Jong-Hwan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i2711-901f032cd36a2e13646c8bad0d808ffdc645cccc088f5e7def2b9f95b343e4ad3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Al2O3</topic><topic>growth</topic><topic>multilayers</topic><topic>nanorods</topic><topic>SiOx</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yoon, Jong-Hwan</creatorcontrib><collection>Istex</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. A, Applications and materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yoon, Jong-Hwan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of aluminum oxide nanorods using sandwich structures composed of Al and SiOx layers</atitle><jtitle>Physica status solidi. A, Applications and materials science</jtitle><addtitle>Phys. Status Solidi A</addtitle><date>2015-02</date><risdate>2015</risdate><volume>212</volume><issue>2</issue><spage>406</spage><epage>409</epage><pages>406-409</pages><issn>1862-6300</issn><eissn>1862-6319</eissn><abstract>In this work, we report a simple method for growing aluminum oxide nanorods based on low‐temperature annealing of a sandwich structure composed of a thin Al film sandwiched between two silicon‐rich oxide (SiOx: 0 < x < 2) layers produced by plasma‐enhanced chemical vapor deposition. Aluminum oxide nanorods produced using a typical sandwich structure of SiO1.4(20 nm)/Al(2 nm)/SiO1.4(20 nm)/Si substrate exhibited the features of the mean diameter and length of the nanorods of about 0.3 and 1.7 μm, respectively. A possible growth mechanism is discussed on the basis of the vapor–solid process. The nanorod growth is proposed to be mediated by a vapor–solid mechanism in which the dominant vapor‐phase source of reactants is Al2O/AlO produced by a phase separation of SiOx.</abstract><cop>Weinheim</cop><pub>Blackwell Publishing Ltd</pub><doi>10.1002/pssa.201431141</doi><tpages>4</tpages></addata></record> |
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subjects | Al2O3 growth multilayers nanorods SiOx |
title | Growth of aluminum oxide nanorods using sandwich structures composed of Al and SiOx layers |
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