A Low-Noise, Large-Dynamic-Range-Enhanced Amplifier Based on JFET Buffering Input and JFET Bootstrap Structure
We design a low-noise, large-dynamic-range amplifier based on transimpedance amplifier (TIA) for detecting shot noise of 1064-nm laser in quantum optical experiments. Compared with a single-junction field-effect transistor (JFET) buffered TIA, the electronic noise is effectively 2.8 dB suppressed at...
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creator | Zhou, Haijun Wang, Wenzhe Chen, Chaoyong Zheng, Yaohui |
description | We design a low-noise, large-dynamic-range amplifier based on transimpedance amplifier (TIA) for detecting shot noise of 1064-nm laser in quantum optical experiments. Compared with a single-junction field-effect transistor (JFET) buffered TIA, the electronic noise is effectively 2.8 dB suppressed at the analysis of 2 MHz, and 4 dB suppressed at 4 MHz by means of a JFET bootstrap structure. Under the transimpedance gain of 200 kΩ and 0.5 pF, the measured shot noise at the injected laser power of 51 μW is 12.5 dB above the electronic noise at 2 MHz, and 9.8 dB at 4 MHz. With adjustment of bias condition of the bootstrap structure and application of a L-C (inductance and capacitance) structure, the dynamic range is largely boosted from the original 1.52 to 11.22 mW. The amplifier meets the requirement of SNR for Bell-state detection in quantum optical experiments. |
doi_str_mv | 10.1109/JSEN.2014.2371893 |
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Compared with a single-junction field-effect transistor (JFET) buffered TIA, the electronic noise is effectively 2.8 dB suppressed at the analysis of 2 MHz, and 4 dB suppressed at 4 MHz by means of a JFET bootstrap structure. Under the transimpedance gain of 200 kΩ and 0.5 pF, the measured shot noise at the injected laser power of 51 μW is 12.5 dB above the electronic noise at 2 MHz, and 9.8 dB at 4 MHz. With adjustment of bias condition of the bootstrap structure and application of a L-C (inductance and capacitance) structure, the dynamic range is largely boosted from the original 1.52 to 11.22 mW. The amplifier meets the requirement of SNR for Bell-state detection in quantum optical experiments.</description><identifier>ISSN: 1530-437X</identifier><identifier>EISSN: 1558-1748</identifier><identifier>DOI: 10.1109/JSEN.2014.2371893</identifier><identifier>CODEN: ISJEAZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bell-state detection ; Capacitance ; JFET bootstrap ; JFET buffering ; JFETs ; L-C structure ; large dynamic range ; Laser noise ; low noise ; Noise ; Optical amplifiers ; Optical buffering ; quantum optical experiments ; Stimulated emission ; TIA</subject><ispartof>IEEE sensors journal, 2015-04, Vol.15 (4), p.2101-2105</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2015</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c336t-a4c2551f9999dafa3cad12974e0487ff2abe8818d905a80144432bfdb18e02443</citedby><cites>FETCH-LOGICAL-c336t-a4c2551f9999dafa3cad12974e0487ff2abe8818d905a80144432bfdb18e02443</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6960851$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids></links><search><creatorcontrib>Zhou, Haijun</creatorcontrib><creatorcontrib>Wang, Wenzhe</creatorcontrib><creatorcontrib>Chen, Chaoyong</creatorcontrib><creatorcontrib>Zheng, Yaohui</creatorcontrib><title>A Low-Noise, Large-Dynamic-Range-Enhanced Amplifier Based on JFET Buffering Input and JFET Bootstrap Structure</title><title>IEEE sensors journal</title><addtitle>JSEN</addtitle><description>We design a low-noise, large-dynamic-range amplifier based on transimpedance amplifier (TIA) for detecting shot noise of 1064-nm laser in quantum optical experiments. Compared with a single-junction field-effect transistor (JFET) buffered TIA, the electronic noise is effectively 2.8 dB suppressed at the analysis of 2 MHz, and 4 dB suppressed at 4 MHz by means of a JFET bootstrap structure. Under the transimpedance gain of 200 kΩ and 0.5 pF, the measured shot noise at the injected laser power of 51 μW is 12.5 dB above the electronic noise at 2 MHz, and 9.8 dB at 4 MHz. With adjustment of bias condition of the bootstrap structure and application of a L-C (inductance and capacitance) structure, the dynamic range is largely boosted from the original 1.52 to 11.22 mW. The amplifier meets the requirement of SNR for Bell-state detection in quantum optical experiments.</description><subject>Bell-state detection</subject><subject>Capacitance</subject><subject>JFET bootstrap</subject><subject>JFET buffering</subject><subject>JFETs</subject><subject>L-C structure</subject><subject>large dynamic range</subject><subject>Laser noise</subject><subject>low noise</subject><subject>Noise</subject><subject>Optical amplifiers</subject><subject>Optical buffering</subject><subject>quantum optical experiments</subject><subject>Stimulated emission</subject><subject>TIA</subject><issn>1530-437X</issn><issn>1558-1748</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><recordid>eNo9kFFLwzAQx4MoOKcfQHwJ-Gpm0iRt-rjNqRtlglPwLWRtMju2pCYtsm9vyob3cvfn_nfH_QC4JXhECM4fF6vZcpRgwkYJzYjI6RkYEM4FIhkT531NMWI0-7oEVyFsMSZ5xrMBsGNYuF-0dHXQD7BQfqPR08GqfV2id2WjmtlvZUtdwfG-2dWm1h5OVIjaWbh4nn3ASWeM9rXdwLltuhYqW50azrWh9aqBq9Z3Zdt5fQ0ujNoFfXPKQ_AZndNXVLy9zKfjApWUpi1SrEw4JyaPUSmjaKkqkuQZ05iJzJhErbUQRFQ55krErxmjydpUayI0TqIYgvvj3sa7n06HVm5d5208KUnKcUREae8iR1fpXQheG9n4eq_8QRIse6yyxyp7rPKENc7cHWdqrfW_P81TLDihfwTEckA</recordid><startdate>201504</startdate><enddate>201504</enddate><creator>Zhou, Haijun</creator><creator>Wang, Wenzhe</creator><creator>Chen, Chaoyong</creator><creator>Zheng, Yaohui</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>ESBDL</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>201504</creationdate><title>A Low-Noise, Large-Dynamic-Range-Enhanced Amplifier Based on JFET Buffering Input and JFET Bootstrap Structure</title><author>Zhou, Haijun ; Wang, Wenzhe ; Chen, Chaoyong ; Zheng, Yaohui</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c336t-a4c2551f9999dafa3cad12974e0487ff2abe8818d905a80144432bfdb18e02443</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Bell-state detection</topic><topic>Capacitance</topic><topic>JFET bootstrap</topic><topic>JFET buffering</topic><topic>JFETs</topic><topic>L-C structure</topic><topic>large dynamic range</topic><topic>Laser noise</topic><topic>low noise</topic><topic>Noise</topic><topic>Optical amplifiers</topic><topic>Optical buffering</topic><topic>quantum optical experiments</topic><topic>Stimulated emission</topic><topic>TIA</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhou, Haijun</creatorcontrib><creatorcontrib>Wang, Wenzhe</creatorcontrib><creatorcontrib>Chen, Chaoyong</creatorcontrib><creatorcontrib>Zheng, Yaohui</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE Open Access Journals</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE sensors journal</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhou, Haijun</au><au>Wang, Wenzhe</au><au>Chen, Chaoyong</au><au>Zheng, Yaohui</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Low-Noise, Large-Dynamic-Range-Enhanced Amplifier Based on JFET Buffering Input and JFET Bootstrap Structure</atitle><jtitle>IEEE sensors journal</jtitle><stitle>JSEN</stitle><date>2015-04</date><risdate>2015</risdate><volume>15</volume><issue>4</issue><spage>2101</spage><epage>2105</epage><pages>2101-2105</pages><issn>1530-437X</issn><eissn>1558-1748</eissn><coden>ISJEAZ</coden><abstract>We design a low-noise, large-dynamic-range amplifier based on transimpedance amplifier (TIA) for detecting shot noise of 1064-nm laser in quantum optical experiments. Compared with a single-junction field-effect transistor (JFET) buffered TIA, the electronic noise is effectively 2.8 dB suppressed at the analysis of 2 MHz, and 4 dB suppressed at 4 MHz by means of a JFET bootstrap structure. Under the transimpedance gain of 200 kΩ and 0.5 pF, the measured shot noise at the injected laser power of 51 μW is 12.5 dB above the electronic noise at 2 MHz, and 9.8 dB at 4 MHz. With adjustment of bias condition of the bootstrap structure and application of a L-C (inductance and capacitance) structure, the dynamic range is largely boosted from the original 1.52 to 11.22 mW. The amplifier meets the requirement of SNR for Bell-state detection in quantum optical experiments.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JSEN.2014.2371893</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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subjects | Bell-state detection Capacitance JFET bootstrap JFET buffering JFETs L-C structure large dynamic range Laser noise low noise Noise Optical amplifiers Optical buffering quantum optical experiments Stimulated emission TIA |
title | A Low-Noise, Large-Dynamic-Range-Enhanced Amplifier Based on JFET Buffering Input and JFET Bootstrap Structure |
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