A Complete Characterization and Modeling of the BTI-Induced Dynamic Variability of SRAM Arrays in 28-nm FD-SOI Technology

In this paper, we present for the first time a direct measurement procedure to characterize the bias temperature instability (BTI)-induced dynamic variability in static random access memory (SRAM) cells. This measurement procedure is based on the supply read retention voltage metric. The variability...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on electron devices 2014-12, Vol.61 (12), p.3991-3999
Hauptverfasser:	El Husseini, Joanna, Garros, Xavier, Cluzel, Jacques, Subirats, Alexandre, Makosiej, Adam, Weber, Olivier, Thomas, Olivier, Huard, Vincent, Federspiel, Xavier, Reimbold, Gilles
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias temperature instability (BTI) stress measurements BTI stress modeling Random access memory read failure probability evaluation SRAM cells static random access memory (SRAM) cells Stress Stress measurement supply read retention voltage (SRRV) metric Transistors Voltage measurement
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!