A Novel Self-Reference Technique for STT-RAM Read and Write Reliability Enhancement
Spin-transfer torque random access memory (STT-RAM) has demonstrated great potential in embedded and stand-alone applications. However, process variations and thermal fluctuations greatly influence the operation reliability of STT-RAM and limit its scalability. In this paper, we propose a new field-...
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| Veröffentlicht in: | IEEE transactions on magnetics 2014-11, Vol.50 (11), p.1-4 |
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| creator | Eken, Enes Zhang, Yaojun Wen, Wujie Joshi, Rajiv Li, Helen Chen, Yiran |
| description | Spin-transfer torque random access memory (STT-RAM) has demonstrated great potential in embedded and stand-alone applications. However, process variations and thermal fluctuations greatly influence the operation reliability of STT-RAM and limit its scalability. In this paper, we propose a new field-assisted access scheme to improve the read/write reliability and performance of STT-RAM. During read operations, an external magnetic field is applied to a magnetic tunneling junction (MTJ) device, generating a resistive sense signal without referring to other devices. Such a self-reference scheme offers a very promising alternative approach to overcome the severe cell-to-cell variations at highly scaled technology node. Furthermore, the external magnetic field can be used to assist the MTJ switching during write operations without introducing extra hardware overhead. |
| doi_str_mv | 10.1109/TMAG.2014.2323196 |
| format | Article |
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Furthermore, the external magnetic field can be used to assist the MTJ switching during write operations without introducing extra hardware overhead.</description><subject>Magnetic switching</subject><subject>Magnetic tunneling</subject><subject>Magnetism</subject><subject>Magnetization</subject><subject>Resistance</subject><subject>Sensors</subject><subject>Switches</subject><subject>Writing</subject><issn>0018-9464</issn><issn>1941-0069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1Lw0AQhhdRsFZ_gHhZ8Jw6s7tJdo-h1Cq0Cm3EY9jsB01Jk7pJhf57U1o8DS-8z8zwEPKIMEEE9ZIvs_mEAYoJ44yjSq7ICJXACCBR12QEgDJSIhG35K7rtkMUMcKIrDP60f66mq5d7aOV8y64xjiaO7Npqp-Do74NdJ3n0Spb0pXTlurG0u9Q9W6IdaXLqq76I501Gz2AO9f09-TG67pzD5c5Jl-vs3z6Fi0-5-_TbBEZpngfWQBtFY9NqRA0AkNeAjex8VyWymqrZepLyaxIvDbKaxmnBlPGjJWl0YKPyfN57z60w6ddX2zbQ2iGkwUmHDAVKk2HFp5bJrRdF5wv9qHa6XAsEIqTu-Lkrji5Ky7uBubpzFTOuf9-olKUIPkfKappqw</recordid><startdate>201411</startdate><enddate>201411</enddate><creator>Eken, Enes</creator><creator>Zhang, Yaojun</creator><creator>Wen, Wujie</creator><creator>Joshi, Rajiv</creator><creator>Li, Helen</creator><creator>Chen, Yiran</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| subjects | Magnetic switching Magnetic tunneling Magnetism Magnetization Resistance Sensors Switches Writing |
| title | A Novel Self-Reference Technique for STT-RAM Read and Write Reliability Enhancement |
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