GaN-Based Resonant-Cavity LEDs Featuring a Si-Diffusion-Defined Current Blocking Layer
GaN-based resonant-cavity light-emitting diode (RCLED) featuring a Si-diffusion-defined confinement structure is reported for the first time. The charge-coupled device images exhibited round, bright spots of sizes corresponding to the diffusion-defined aperture sizes under continuous-wave high-curre...
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| Veröffentlicht in: | IEEE photonics technology letters 2014-12, Vol.26 (24), p.2488-2491 |
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| container_end_page | 2491 |
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| container_title | IEEE photonics technology letters |
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| creator | Yeh, Pinghui Sophia Meng-Chun Yu Jia-Huan Lin Ching-Chin Huang Yen-Chao Liao Da-Wei Lin Jia-Rong Fan Hao-Chung Kuo |
| description | GaN-based resonant-cavity light-emitting diode (RCLED) featuring a Si-diffusion-defined confinement structure is reported for the first time. The charge-coupled device images exhibited round, bright spots of sizes corresponding to the diffusion-defined aperture sizes under continuous-wave high-current-density operation and at room temperature. The full widths at half maximum of the electroluminescence spectra were 2 and 1.5 nm for 10- and 5-mu-diameter RCLEDs, respectively. A stable peak wavelength of 406.6 nm was maintained at various injection currents. The results suggest Si diffusion is an effective means to reduce aperture size. The design and fabrication of the devices are described. |
| doi_str_mv | 10.1109/LPT.2014.2362297 |
| format | Article |
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The charge-coupled device images exhibited round, bright spots of sizes corresponding to the diffusion-defined aperture sizes under continuous-wave high-current-density operation and at room temperature. The full widths at half maximum of the electroluminescence spectra were 2 and 1.5 nm for 10- and 5-mu-diameter RCLEDs, respectively. A stable peak wavelength of 406.6 nm was maintained at various injection currents. The results suggest Si diffusion is an effective means to reduce aperture size. The design and fabrication of the devices are described.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2014.2362297</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Apertures ; Blocking ; Cavity resonators ; Charge coupled devices ; current blocking layer ; Diffusion ; Distributed Bragg reflectors ; Electroluminescence ; Gallium nitride ; GaN-based LED ; Indium tin oxide ; Injection current ; Light emitting diodes ; resonant-cavity light-emitting diode ; Silicon ; Spectra ; vertical cavity surface emitting laser ; Wavelengths</subject><ispartof>IEEE photonics technology letters, 2014-12, Vol.26 (24), p.2488-2491</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2014</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c324t-2b149af3baa674ad6fa495b832d77faaaaf65ea6d7b1e064910b50861b69e5823</citedby><cites>FETCH-LOGICAL-c324t-2b149af3baa674ad6fa495b832d77faaaaf65ea6d7b1e064910b50861b69e5823</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6920027$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6920027$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yeh, Pinghui Sophia</creatorcontrib><creatorcontrib>Meng-Chun Yu</creatorcontrib><creatorcontrib>Jia-Huan Lin</creatorcontrib><creatorcontrib>Ching-Chin Huang</creatorcontrib><creatorcontrib>Yen-Chao Liao</creatorcontrib><creatorcontrib>Da-Wei Lin</creatorcontrib><creatorcontrib>Jia-Rong Fan</creatorcontrib><creatorcontrib>Hao-Chung Kuo</creatorcontrib><title>GaN-Based Resonant-Cavity LEDs Featuring a Si-Diffusion-Defined Current Blocking Layer</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>GaN-based resonant-cavity light-emitting diode (RCLED) featuring a Si-diffusion-defined confinement structure is reported for the first time. The charge-coupled device images exhibited round, bright spots of sizes corresponding to the diffusion-defined aperture sizes under continuous-wave high-current-density operation and at room temperature. The full widths at half maximum of the electroluminescence spectra were 2 and 1.5 nm for 10- and 5-mu-diameter RCLEDs, respectively. A stable peak wavelength of 406.6 nm was maintained at various injection currents. The results suggest Si diffusion is an effective means to reduce aperture size. The design and fabrication of the devices are described.</description><subject>Apertures</subject><subject>Blocking</subject><subject>Cavity resonators</subject><subject>Charge coupled devices</subject><subject>current blocking layer</subject><subject>Diffusion</subject><subject>Distributed Bragg reflectors</subject><subject>Electroluminescence</subject><subject>Gallium nitride</subject><subject>GaN-based LED</subject><subject>Indium tin oxide</subject><subject>Injection current</subject><subject>Light emitting diodes</subject><subject>resonant-cavity light-emitting diode</subject><subject>Silicon</subject><subject>Spectra</subject><subject>vertical cavity surface emitting laser</subject><subject>Wavelengths</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE1Lw0AQhoMoWKt3wUvAi5et-5Xd5mg_FYKKVq9hkszK1jTR3UTov3dLiwfnMu_heYfhiaJLRkeM0fQ2e16NOGVyxIXiPNVH0YClkhHKtDwOmYbMmEhOozPv1zSQiZCD6H0Jj2QCHqv4BX3bQNORKfzYbhtn85mPFwhd72zzEUP8asnMGtN72zZkhsY2oTXtncOmiyd1W37uuAy26M6jEwO1x4vDHkZvi_lqek-yp-XD9C4jpeCyI7xgMgUjCgClJVTKgEyTYix4pbWBMEYlCKrSBUOqZMpokdCxYoVKMRlzMYxu9ne_XPvdo-_yjfUl1jU02PY-ZyphUlCRiIBe_0PXbe-a8F2guFZCaaUDRfdU6VrvHZr8y9kNuG3OaL4TnQfR-U50fhAdKlf7ikXEP1ylnFKuxS9bonex</recordid><startdate>20141215</startdate><enddate>20141215</enddate><creator>Yeh, Pinghui Sophia</creator><creator>Meng-Chun Yu</creator><creator>Jia-Huan Lin</creator><creator>Ching-Chin Huang</creator><creator>Yen-Chao Liao</creator><creator>Da-Wei Lin</creator><creator>Jia-Rong Fan</creator><creator>Hao-Chung Kuo</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The charge-coupled device images exhibited round, bright spots of sizes corresponding to the diffusion-defined aperture sizes under continuous-wave high-current-density operation and at room temperature. The full widths at half maximum of the electroluminescence spectra were 2 and 1.5 nm for 10- and 5-mu-diameter RCLEDs, respectively. A stable peak wavelength of 406.6 nm was maintained at various injection currents. The results suggest Si diffusion is an effective means to reduce aperture size. The design and fabrication of the devices are described.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LPT.2014.2362297</doi><tpages>4</tpages></addata></record> |
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| subjects | Apertures Blocking Cavity resonators Charge coupled devices current blocking layer Diffusion Distributed Bragg reflectors Electroluminescence Gallium nitride GaN-based LED Indium tin oxide Injection current Light emitting diodes resonant-cavity light-emitting diode Silicon Spectra vertical cavity surface emitting laser Wavelengths |
| title | GaN-Based Resonant-Cavity LEDs Featuring a Si-Diffusion-Defined Current Blocking Layer |
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