Enhancement of IR photoluminescence of [beta]-FeSi2 nanocrystals by Cu-doping and study of its mechanism

We have investigated the IR photoluminescence (PL) behavior of Cu-doped [beta]-FeSi2 nanocrystals ([beta]-NCs) embedded in Si layers. The diffusion rate of Cu atom was controlled by annealing. The most appropriate condition brought the largest intensities of both the intrinsic A band emission at 0.8...

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Veröffentlicht in:	Physica status solidi. C 2014-11, Vol.11 (11-12), p.1626
Hauptverfasser:	Maeda, Yoshihito, Tatsumi, Takahide, Kawakubo, Yuki, Noguchi, Yuya, Kobayashi, Hiroyuki, Narumi, Kazumasa, Sakai, Seiji
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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