X-band 100 W solid-state power amplifier using a 0.25 µM GaN HEMT technology

X-band 100 W solid-state power amplifier using a 0.25 µM GaN HEMT technology

This article describes the successful development and the performance of X-band 100 W pulsed SSPA using a 25 W GaN-on-SiC high electron mobility transistor (HEMT). The GaN HEMT with a gate length of 0.25 µm and a total gate width of 8 mm were fabricated. The GaN HEMT provide a linear gain of 8 dB wi...

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Veröffentlicht in:Microwave and optical technology letters 2015-01, Vol.57 (1), p.212
Hauptverfasser: Kang, Dong Min, Lim, Jong Won, Ahn, Ho Kyun, Kim, Sung Il, Kim, Hae Cheon, Yoon, Hyung Sup, Kwon, Yong Hwan, Nam, Eun Soo
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container_title Microwave and optical technology letters
container_volume 57
creator Kang, Dong Min
Lim, Jong Won
Ahn, Ho Kyun
Kim, Sung Il
Kim, Hae Cheon
Yoon, Hyung Sup
Kwon, Yong Hwan
Nam, Eun Soo
description This article describes the successful development and the performance of X-band 100 W pulsed SSPA using a 25 W GaN-on-SiC high electron mobility transistor (HEMT). The GaN HEMT with a gate length of 0.25 µm and a total gate width of 8 mm were fabricated. The GaN HEMT provide a linear gain of 8 dB with 25 W output power operated at 30 V drain voltage in continuous wave (CW)-operation with a power added efficiency of 43% at X-band. It also shows a maximum output power density of 3 W/mm. The X-band pulsed SSPA exhibited an output power of 100 W (50 dBm) with a power gain of 53 dB in a frequency range of 9.2-9.5 GHz. This 25 W GaN HEMT and X-band 100 W pulsed SSPA are suitable for the radar systems and related applications in X-band. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:212-216, 2015
doi_str_mv 10.1002/mop.28814
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