Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 µm
The selectively oxidised vertical-cavity lasers emitting at 1294nm using InGaAsN/GaAs quantum wells which exhibit continuous wave operation at and above room temperature are reported for the first time. The lasers employ two n-type Al^sub 0.94^Ga^sub 0.06^As/GaAs distributed Bragg reflectors each wi...
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| Veröffentlicht in: | Electronics letters 2000-08, Vol.36 (16), p.1 |
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| container_title | Electronics letters |
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| creator | Choquette, K D Klem, J F Fischer, A J Blum, O Allerman, A A Fritz, I J Kurtz, S R Breiland, W G Sieg, R Geib, K M Scott, J W Naone, R L |
| description | The selectively oxidised vertical-cavity lasers emitting at 1294nm using InGaAsN/GaAs quantum wells which exhibit continuous wave operation at and above room temperature are reported for the first time. The lasers employ two n-type Al^sub 0.94^Ga^sub 0.06^As/GaAs distributed Bragg reflectors each with a selectively oxidised current aperture adjacent to the optical cavity, and the top output mirror contains a tunnel junction to inject holes into the active region. The continuous wave singlemode lasing is observed up to 55 degree Celsius. These lasers exhibit the longest wavelength reported to date for vertical-cavity surface lasers grown on GaAs substrates. |
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The lasers employ two n-type Al^sub 0.94^Ga^sub 0.06^As/GaAs distributed Bragg reflectors each with a selectively oxidised current aperture adjacent to the optical cavity, and the top output mirror contains a tunnel junction to inject holes into the active region. The continuous wave singlemode lasing is observed up to 55 degree Celsius. 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| source | Alma/SFX Local Collection |
| title | Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 µm |
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