Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates

In this work, efficiency droop of InGaN/GaN multiple-quantum-well LEDs with super wide well (WW) is discussed by comparing the external quantum efficiency (EQE) of GaN grown on sapphire and FS-GaN substrates. The luminescence and electrical characteristics of these WW LEDs are also experimentally an...

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Veröffentlicht in:	IEEE photonics journal 2014-12, Vol.6 (6), p.1-10
Hauptverfasser:	Wei, Tongbo, Zhang, Lian, Ji, Xiaoli, Wang, Junxi, Huo, Ziqiang, Sun, Baojun, Hu, Qiang, Wei, Xuecheng, Duan, Ruifei, Zhao, Lixia, Zeng, Yiping, Li, Jinmin
Format:	Artikel
Sprache:	eng
Schlagworte:	Augers Density Gallium nitride Gallium nitrides Indium gallium nitrides Light emitting diodes Lighting Luminescence Optical devices Polarization Quantum well devices Sapphire Strain Strain relaxation Substrates Surface morphology
Online-Zugang:	Volltext
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