Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates
In this work, efficiency droop of InGaN/GaN multiple-quantum-well LEDs with super wide well (WW) is discussed by comparing the external quantum efficiency (EQE) of GaN grown on sapphire and FS-GaN substrates. The luminescence and electrical characteristics of these WW LEDs are also experimentally an...
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| Veröffentlicht in: | IEEE photonics journal 2014-12, Vol.6 (6), p.1-10 |
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| creator | Wei, Tongbo Zhang, Lian Ji, Xiaoli Wang, Junxi Huo, Ziqiang Sun, Baojun Hu, Qiang Wei, Xuecheng Duan, Ruifei Zhao, Lixia Zeng, Yiping Li, Jinmin |
| description | In this work, efficiency droop of InGaN/GaN multiple-quantum-well LEDs with super wide well (WW) is discussed by comparing the external quantum efficiency (EQE) of GaN grown on sapphire and FS-GaN substrates. The luminescence and electrical characteristics of these WW LEDs are also experimentally and theoretically analyzed. With the increase of well width from 3 nm to 6 nm, high V-pits density and more strain relaxation are found in WW LED on sapphire, which exhibits greatly reduced peak efficiency but almost negligible droop behavior. In contrast, despite a larger polarization field, WW LED on FS-GaN shows obviously enhanced peak efficiency and comparable droop compared to the counterpart with 3-nm well. The Auger recombination probably dominates the mechanism of efficiency droop rather than defect-related nonradiative recombination or polarization effect in the WW LED on both sapphire and FS-GaN, especially at high current density. |
| doi_str_mv | 10.1109/JPHOT.2014.2363428 |
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The luminescence and electrical characteristics of these WW LEDs are also experimentally and theoretically analyzed. With the increase of well width from 3 nm to 6 nm, high V-pits density and more strain relaxation are found in WW LED on sapphire, which exhibits greatly reduced peak efficiency but almost negligible droop behavior. In contrast, despite a larger polarization field, WW LED on FS-GaN shows obviously enhanced peak efficiency and comparable droop compared to the counterpart with 3-nm well. The Auger recombination probably dominates the mechanism of efficiency droop rather than defect-related nonradiative recombination or polarization effect in the WW LED on both sapphire and FS-GaN, especially at high current density.</description><identifier>ISSN: 1943-0655</identifier><identifier>EISSN: 1943-0647</identifier><identifier>DOI: 10.1109/JPHOT.2014.2363428</identifier><identifier>CODEN: PJHOC3</identifier><language>eng</language><publisher>Piscataway: IEEE</publisher><subject>Augers ; Density ; Gallium nitride ; Gallium nitrides ; Indium gallium nitrides ; Light emitting diodes ; Lighting ; Luminescence ; Optical devices ; Polarization ; Quantum well devices ; Sapphire ; Strain ; Strain relaxation ; Substrates ; Surface morphology</subject><ispartof>IEEE photonics journal, 2014-12, Vol.6 (6), p.1-10</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Dec 2014</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c438t-aaad112e473510d69b12c096304d7485a190197724cd6aaec6577cb052edf4113</citedby><cites>FETCH-LOGICAL-c438t-aaad112e473510d69b12c096304d7485a190197724cd6aaec6577cb052edf4113</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6939631$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,864,2102,27633,27924,27925,54933</link.rule.ids></links><search><creatorcontrib>Wei, Tongbo</creatorcontrib><creatorcontrib>Zhang, Lian</creatorcontrib><creatorcontrib>Ji, Xiaoli</creatorcontrib><creatorcontrib>Wang, Junxi</creatorcontrib><creatorcontrib>Huo, Ziqiang</creatorcontrib><creatorcontrib>Sun, Baojun</creatorcontrib><creatorcontrib>Hu, Qiang</creatorcontrib><creatorcontrib>Wei, Xuecheng</creatorcontrib><creatorcontrib>Duan, Ruifei</creatorcontrib><creatorcontrib>Zhao, Lixia</creatorcontrib><creatorcontrib>Zeng, Yiping</creatorcontrib><creatorcontrib>Li, Jinmin</creatorcontrib><title>Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates</title><title>IEEE photonics journal</title><addtitle>JPHOT</addtitle><description>In this work, efficiency droop of InGaN/GaN multiple-quantum-well LEDs with super wide well (WW) is discussed by comparing the external quantum efficiency (EQE) of GaN grown on sapphire and FS-GaN substrates. The luminescence and electrical characteristics of these WW LEDs are also experimentally and theoretically analyzed. With the increase of well width from 3 nm to 6 nm, high V-pits density and more strain relaxation are found in WW LED on sapphire, which exhibits greatly reduced peak efficiency but almost negligible droop behavior. In contrast, despite a larger polarization field, WW LED on FS-GaN shows obviously enhanced peak efficiency and comparable droop compared to the counterpart with 3-nm well. The Auger recombination probably dominates the mechanism of efficiency droop rather than defect-related nonradiative recombination or polarization effect in the WW LED on both sapphire and FS-GaN, especially at high current density.</description><subject>Augers</subject><subject>Density</subject><subject>Gallium nitride</subject><subject>Gallium nitrides</subject><subject>Indium gallium nitrides</subject><subject>Light emitting diodes</subject><subject>Lighting</subject><subject>Luminescence</subject><subject>Optical devices</subject><subject>Polarization</subject><subject>Quantum well devices</subject><subject>Sapphire</subject><subject>Strain</subject><subject>Strain relaxation</subject><subject>Substrates</subject><subject>Surface morphology</subject><issn>1943-0655</issn><issn>1943-0647</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><sourceid>DOA</sourceid><recordid>eNpdkcFuGyEQhldVKzVN-wLtBamXXtYBFtjl2Dqu48hqKjVVjmiWHRwse3EBp8oz9KWL48iHHBAM-v6fYf6q-sjohDGqL65_Xt3cTjhlYsIb1QjevarOmBZNTZVoX5_OUr6t3qW0plRpJvVZ9W8xPmDKfgXZh5EER2bOeetxtI8ExoFcxhB25Bvew4MPkUzDdgfRp8K6Ui7GOfy4KIv82u8wkjs_YH2Hmw1Z-tV9JrOtz9mPK3Lpw4CJzGP4W14ZS-0cRhxzEfYpR8iY3ldvHGwSfnjez6vf32e306t6eTNfTL8uayuaLtcAMDDGUbSNZHRQumfcUq0aKoZWdBKYpky3LRd2UABolWxb21PJcXCCsea8Whx9hwBrs4t-C_HRBPDm6SLElYGYvd2gkVT1TjmQWlkx2B4oMGpb7JHaztK2eH05eu1i-LMvkzRbn2wZAIwY9skwJThXjDeyoJ9foOuwj2P5aaEOPXe8o4XiR8rGkFJEd2qQUXPI2jxlbQ5Zm-esi-jTUeQR8SRQuilTYc1_C0eleQ</recordid><startdate>20141201</startdate><enddate>20141201</enddate><creator>Wei, Tongbo</creator><creator>Zhang, Lian</creator><creator>Ji, Xiaoli</creator><creator>Wang, Junxi</creator><creator>Huo, Ziqiang</creator><creator>Sun, Baojun</creator><creator>Hu, Qiang</creator><creator>Wei, Xuecheng</creator><creator>Duan, Ruifei</creator><creator>Zhao, Lixia</creator><creator>Zeng, Yiping</creator><creator>Li, Jinmin</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| subjects | Augers Density Gallium nitride Gallium nitrides Indium gallium nitrides Light emitting diodes Lighting Luminescence Optical devices Polarization Quantum well devices Sapphire Strain Strain relaxation Substrates Surface morphology |
| title | Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates |
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