TC-LIGBTs on the Thin SoI Layer for the High Voltage Monolithic ICs With High Current Density and Latch-Up Immunity

A new 700 V tridimensional channel-lateral insulated-gate bipolar transistor (TC-LIGBT) structure on 1.5-μm-thin silicon on insulator (SoI) layer is presented in detail in this paper. There are numerous separated p-body cells located in the emitter region of the investigated TC-LIGBT, which can incr...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on electron devices 2014-11, Vol.61 (11), p.3814-3820
Hauptverfasser:	Zhu, Jing, Sun, Weifeng, Dai, Weinan, Zhang, Long, Lu, Shenli, Shi, Longxi, Yi, Yangbo, Zhang, Sen, Su, Wei
Format:	Artikel
Sprache:	eng
Schlagworte:	Channels Current density Density Devices Doping High voltages Immunity Insulated gate bipolar transistors Integrated circuits JFETs Latch-up latch-up immunity lateral insulated-gate bipolar transistor (LIGBT) Semiconductors silicon on insulator (SoI) Silicon-on-insulator Strips Thin films
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!