Oxidation Behavior of SiC Whiskers at 600-1400°C in Air
The oxidation behavior of SiC whiskers (SiCW) with a diameter size of 50–200 nm has been investigated at 600°C–1400°C in air. Experimental results reveal that SiCW exhibit a low oxidation rate below 1100°C while a significant larger oxidation rate after that. This can be attributed to the small diam...
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| Veröffentlicht in: | Journal of the American Ceramic Society 2014-09, Vol.97 (9), p.2698-2701 |
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| container_title | Journal of the American Ceramic Society |
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| creator | Kuang, Jianlei Cao, Wenbin |
| description | The oxidation behavior of SiC whiskers (SiCW) with a diameter size of 50–200 nm has been investigated at 600°C–1400°C in air. Experimental results reveal that SiCW exhibit a low oxidation rate below 1100°C while a significant larger oxidation rate after that. This can be attributed to the small diameter size of SiCW, which determines that it is hard to form a protective SiO2 layer thick enough to hamper the diffusion of oxygen effectively. Both nonisothermal and isothermal oxidation kinetics were studied and the apparent oxidation energy was calculated to further understand the oxidation behavior of the SiCW. |
| doi_str_mv | 10.1111/jace.13096 |
| format | Article |
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Experimental results reveal that SiCW exhibit a low oxidation rate below 1100°C while a significant larger oxidation rate after that. This can be attributed to the small diameter size of SiCW, which determines that it is hard to form a protective SiO2 layer thick enough to hamper the diffusion of oxygen effectively. Both nonisothermal and isothermal oxidation kinetics were studied and the apparent oxidation energy was calculated to further understand the oxidation behavior of the SiCW.</description><identifier>ISSN: 0002-7820</identifier><identifier>EISSN: 1551-2916</identifier><identifier>DOI: 10.1111/jace.13096</identifier><identifier>CODEN: JACTAW</identifier><language>eng</language><publisher>Columbus: Blackwell Publishing Ltd</publisher><subject>Ceramics ; Diffusion ; Oxidation ; Oxygen ; Reaction kinetics ; Silicon carbide ; Temperature effects</subject><ispartof>Journal of the American Ceramic Society, 2014-09, Vol.97 (9), p.2698-2701</ispartof><rights>2014 The American Ceramic Society</rights><rights>Copyright Wiley Subscription Services, Inc. Sep 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4606-8fdec60970220aaa4129f7e18ebe84d4d3eb4fc2b7ea407c99f30e2ab0d1d0763</citedby><cites>FETCH-LOGICAL-c4606-8fdec60970220aaa4129f7e18ebe84d4d3eb4fc2b7ea407c99f30e2ab0d1d0763</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1111%2Fjace.13096$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1111%2Fjace.13096$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27903,27904,45553,45554</link.rule.ids></links><search><contributor>Jacobson, N.</contributor><contributor>Jacobson, N.</contributor><creatorcontrib>Kuang, Jianlei</creatorcontrib><creatorcontrib>Cao, Wenbin</creatorcontrib><title>Oxidation Behavior of SiC Whiskers at 600-1400°C in Air</title><title>Journal of the American Ceramic Society</title><addtitle>J. Am. Ceram. Soc</addtitle><description>The oxidation behavior of SiC whiskers (SiCW) with a diameter size of 50–200 nm has been investigated at 600°C–1400°C in air. Experimental results reveal that SiCW exhibit a low oxidation rate below 1100°C while a significant larger oxidation rate after that. This can be attributed to the small diameter size of SiCW, which determines that it is hard to form a protective SiO2 layer thick enough to hamper the diffusion of oxygen effectively. Both nonisothermal and isothermal oxidation kinetics were studied and the apparent oxidation energy was calculated to further understand the oxidation behavior of the SiCW.</description><subject>Ceramics</subject><subject>Diffusion</subject><subject>Oxidation</subject><subject>Oxygen</subject><subject>Reaction kinetics</subject><subject>Silicon carbide</subject><subject>Temperature effects</subject><issn>0002-7820</issn><issn>1551-2916</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp9kNFKwzAUhoMoOKc3PkHAO6HzJE2T5nLWrSrDIU52GdI2ZdnmOpNOt7fyGXwyO6teem5-Dnz_OfAhdE6gR5q5muvc9EgIkh-gDokiElBJ-CHqAAANREzhGJ14P29WImPWQfF4awtd22qFr81Mv9nK4arETzbB05n1C-M81jXmAAFhAJ8fCbYr3LfuFB2VeunN2U920fNwMElug9E4vUv6oyBnHHgQl4XJOUgBlILWmhEqS2FIbDITs4IVoclYmdNMGM1A5FKWIRiqMyhIAYKHXXTR3l276nVjfK3m1catmpeKRJwwIVgoG-qypXJXee9MqdbOvmi3UwTU3ozam1HfZhqYtPC7XZrdP6S67yeD307Qdqyvzfavo91CcRGKSE0fUsWZfLyZDFM1Cr8AkS9yLA</recordid><startdate>201409</startdate><enddate>201409</enddate><creator>Kuang, Jianlei</creator><creator>Cao, Wenbin</creator><general>Blackwell Publishing Ltd</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>201409</creationdate><title>Oxidation Behavior of SiC Whiskers at 600-1400°C in Air</title><author>Kuang, Jianlei ; Cao, Wenbin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4606-8fdec60970220aaa4129f7e18ebe84d4d3eb4fc2b7ea407c99f30e2ab0d1d0763</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Ceramics</topic><topic>Diffusion</topic><topic>Oxidation</topic><topic>Oxygen</topic><topic>Reaction kinetics</topic><topic>Silicon carbide</topic><topic>Temperature effects</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kuang, Jianlei</creatorcontrib><creatorcontrib>Cao, Wenbin</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of the American Ceramic Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kuang, Jianlei</au><au>Cao, Wenbin</au><au>Jacobson, N.</au><au>Jacobson, N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Oxidation Behavior of SiC Whiskers at 600-1400°C in Air</atitle><jtitle>Journal of the American Ceramic Society</jtitle><addtitle>J. Am. Ceram. Soc</addtitle><date>2014-09</date><risdate>2014</risdate><volume>97</volume><issue>9</issue><spage>2698</spage><epage>2701</epage><pages>2698-2701</pages><issn>0002-7820</issn><eissn>1551-2916</eissn><coden>JACTAW</coden><abstract>The oxidation behavior of SiC whiskers (SiCW) with a diameter size of 50–200 nm has been investigated at 600°C–1400°C in air. Experimental results reveal that SiCW exhibit a low oxidation rate below 1100°C while a significant larger oxidation rate after that. This can be attributed to the small diameter size of SiCW, which determines that it is hard to form a protective SiO2 layer thick enough to hamper the diffusion of oxygen effectively. Both nonisothermal and isothermal oxidation kinetics were studied and the apparent oxidation energy was calculated to further understand the oxidation behavior of the SiCW.</abstract><cop>Columbus</cop><pub>Blackwell Publishing Ltd</pub><doi>10.1111/jace.13096</doi><tpages>4</tpages></addata></record> |
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| ispartof | Journal of the American Ceramic Society, 2014-09, Vol.97 (9), p.2698-2701 |
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| language | eng |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | Ceramics Diffusion Oxidation Oxygen Reaction kinetics Silicon carbide Temperature effects |
| title | Oxidation Behavior of SiC Whiskers at 600-1400°C in Air |
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