Instability of light illumination stress on amorphous In-Ga-Zn-O thin-film transistors

Amorphous In–Ga–Zn–O thin‐film transistors (TFTs) have attracted increasing attention due to their electrical performance and their potential for use in transparent and flexible devices. Because TFTs are exposed to illumination through red, green, and blue color filters, wavelength‐varied light illu...

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Veröffentlicht in:	Journal of the Society for Information Display 2013-08, Vol.21 (8), p.333-338
Hauptverfasser:	Park, Suehye, Cho, Edward Namkyu, Yun, Ilgu
Format:	Artikel
Sprache:	eng
Schlagworte:	bias instability charge trapping In-Ga-Zn-O (IGZO) photon irradiation thin-film transistor (TFT)
Online-Zugang:	Volltext
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