Simulation of Bipolar Transistor Degradation at Various Dose Rates and Electrical Modes for High Dose Conditions
Radiation response of bipolar devices irradiated under various electrical modes and dose rates at high doses has been studied. A nonlinear numerical model including ELDRS effects and electric field reduction at high doses has been developed and validated. Dose degradation of a bipolar transistor...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2014-08, Vol.61 (4), p.1785-1790 |
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| creator | Zebrev, Gennady I. Petrov, Alexander S. Useinov, Rustem G. Ikhsanov, Renat S. Ulimov, Viktor N. Anashin, Vasily S. Elushov, Ilya V. Drosdetsky, Maxim G. Galimov, Artur M. |
| description | Radiation response of bipolar devices irradiated under various electrical modes and dose rates at high doses has been studied. A nonlinear numerical model including ELDRS effects and electric field reduction at high doses has been developed and validated. Dose degradation of a bipolar transistor's gain factor at different dose rates and electrical modes has been simulated and explained in a unified way, based on dependence of the charge yield in isolation oxides on dose rates and electric fields. It has been shown that at high doses one needs to use a nonlinear, self-consistent numerical approach, accounting for simultaneous suppression of the oxide electric field induced by trapped charge. Correspondingly, two types of degradation saturation have been revealed: (i) due to simultaneous thermal annealing, and (ii) due to total dose dependent electric field reduction in oxides. The former implies proportionality of the saturation dose and degradation level to dose rate, the latter permits dose rate independent saturation levels of degradation. |
| doi_str_mv | 10.1109/TNS.2014.2315672 |
| format | Article |
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A nonlinear numerical model including ELDRS effects and electric field reduction at high doses has been developed and validated. Dose degradation of a bipolar transistor's gain factor at different dose rates and electrical modes has been simulated and explained in a unified way, based on dependence of the charge yield in isolation oxides on dose rates and electric fields. It has been shown that at high doses one needs to use a nonlinear, self-consistent numerical approach, accounting for simultaneous suppression of the oxide electric field induced by trapped charge. Correspondingly, two types of degradation saturation have been revealed: (i) due to simultaneous thermal annealing, and (ii) due to total dose dependent electric field reduction in oxides. The former implies proportionality of the saturation dose and degradation level to dose rate, the latter permits dose rate independent saturation levels of degradation.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2014.2315672</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Annealing ; bipolar devices ; Bipolar transistors ; Computer simulation ; Degradation ; Dosage ; dose rate effects ; ELDRS ; Electric fields ; Equations ; Mathematical model ; Mathematical models ; modeling ; Oxides ; Radiation effects ; radiation effects in devices ; Reduction ; Saturation ; Silicon ; simulation ; total dose effects</subject><ispartof>IEEE transactions on nuclear science, 2014-08, Vol.61 (4), p.1785-1790</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Aug 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c394t-9ea7895bb54a35c9f09d6a2f34659d55733ebf1405138ecd9530c7826582b8c63</citedby><cites>FETCH-LOGICAL-c394t-9ea7895bb54a35c9f09d6a2f34659d55733ebf1405138ecd9530c7826582b8c63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6841645$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6841645$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Zebrev, Gennady I.</creatorcontrib><creatorcontrib>Petrov, Alexander S.</creatorcontrib><creatorcontrib>Useinov, Rustem G.</creatorcontrib><creatorcontrib>Ikhsanov, Renat S.</creatorcontrib><creatorcontrib>Ulimov, Viktor N.</creatorcontrib><creatorcontrib>Anashin, Vasily S.</creatorcontrib><creatorcontrib>Elushov, Ilya V.</creatorcontrib><creatorcontrib>Drosdetsky, Maxim G.</creatorcontrib><creatorcontrib>Galimov, Artur M.</creatorcontrib><title>Simulation of Bipolar Transistor Degradation at Various Dose Rates and Electrical Modes for High Dose Conditions</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>Radiation response of bipolar devices irradiated under various electrical modes and dose rates at high doses has been studied. A nonlinear numerical model including ELDRS effects and electric field reduction at high doses has been developed and validated. Dose degradation of a bipolar transistor's gain factor at different dose rates and electrical modes has been simulated and explained in a unified way, based on dependence of the charge yield in isolation oxides on dose rates and electric fields. It has been shown that at high doses one needs to use a nonlinear, self-consistent numerical approach, accounting for simultaneous suppression of the oxide electric field induced by trapped charge. Correspondingly, two types of degradation saturation have been revealed: (i) due to simultaneous thermal annealing, and (ii) due to total dose dependent electric field reduction in oxides. The former implies proportionality of the saturation dose and degradation level to dose rate, the latter permits dose rate independent saturation levels of degradation.</description><subject>Annealing</subject><subject>bipolar devices</subject><subject>Bipolar transistors</subject><subject>Computer simulation</subject><subject>Degradation</subject><subject>Dosage</subject><subject>dose rate effects</subject><subject>ELDRS</subject><subject>Electric fields</subject><subject>Equations</subject><subject>Mathematical model</subject><subject>Mathematical models</subject><subject>modeling</subject><subject>Oxides</subject><subject>Radiation effects</subject><subject>radiation effects in devices</subject><subject>Reduction</subject><subject>Saturation</subject><subject>Silicon</subject><subject>simulation</subject><subject>total dose effects</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkTFPwzAQhS0EEqWwI7FYYmFJsWM7sUdoC0UqINHCajmOU1ylcbCTgX-PoyAGptOdvnf3dA-AS4xmGCNxu33ZzFKE6SwlmGV5egQmmDGeYJbzYzBBCPNEUCFOwVkI-9hShtgEtBt76GvVWddAV8F727paebj1qgk2dM7Dhdl5VY6E6uCH8tb1AS5cMPBNdSZA1ZRwWRvdeatVDZ9dGYdVlK7s7nME564p7bAinIOTStXBXPzWKXh_WG7nq2T9-vg0v1snmgjaJcKonAtWFIwqwrSokCgzlVaEZkyUjOWEmKLCFDFMuNGlYATpnKcZ42nBdUam4Gbc23r31ZvQyYMN2tS1akz0L3HOsxTzlAzo9T9073rfRHcyvpBSHI_ySKGR0t6F4E0lW28Pyn9LjOQQgYwRyCEC-RtBlFyNEmuM-cMzTnFGGfkBCeSBbA</recordid><startdate>20140801</startdate><enddate>20140801</enddate><creator>Zebrev, Gennady I.</creator><creator>Petrov, Alexander S.</creator><creator>Useinov, Rustem G.</creator><creator>Ikhsanov, Renat S.</creator><creator>Ulimov, Viktor N.</creator><creator>Anashin, Vasily S.</creator><creator>Elushov, Ilya V.</creator><creator>Drosdetsky, Maxim G.</creator><creator>Galimov, Artur M.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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I.</creatorcontrib><creatorcontrib>Petrov, Alexander S.</creatorcontrib><creatorcontrib>Useinov, Rustem G.</creatorcontrib><creatorcontrib>Ikhsanov, Renat S.</creatorcontrib><creatorcontrib>Ulimov, Viktor N.</creatorcontrib><creatorcontrib>Anashin, Vasily S.</creatorcontrib><creatorcontrib>Elushov, Ilya V.</creatorcontrib><creatorcontrib>Drosdetsky, Maxim G.</creatorcontrib><creatorcontrib>Galimov, Artur M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Xplore</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Bacteriology Abstracts (Microbiology B)</collection><collection>Ceramic Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Electronics & Communications 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science</jtitle><stitle>TNS</stitle><date>2014-08-01</date><risdate>2014</risdate><volume>61</volume><issue>4</issue><spage>1785</spage><epage>1790</epage><pages>1785-1790</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>Radiation response of bipolar devices irradiated under various electrical modes and dose rates at high doses has been studied. A nonlinear numerical model including ELDRS effects and electric field reduction at high doses has been developed and validated. Dose degradation of a bipolar transistor's gain factor at different dose rates and electrical modes has been simulated and explained in a unified way, based on dependence of the charge yield in isolation oxides on dose rates and electric fields. It has been shown that at high doses one needs to use a nonlinear, self-consistent numerical approach, accounting for simultaneous suppression of the oxide electric field induced by trapped charge. Correspondingly, two types of degradation saturation have been revealed: (i) due to simultaneous thermal annealing, and (ii) due to total dose dependent electric field reduction in oxides. The former implies proportionality of the saturation dose and degradation level to dose rate, the latter permits dose rate independent saturation levels of degradation.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2014.2315672</doi><tpages>6</tpages></addata></record> |
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| subjects | Annealing bipolar devices Bipolar transistors Computer simulation Degradation Dosage dose rate effects ELDRS Electric fields Equations Mathematical model Mathematical models modeling Oxides Radiation effects radiation effects in devices Reduction Saturation Silicon simulation total dose effects |
| title | Simulation of Bipolar Transistor Degradation at Various Dose Rates and Electrical Modes for High Dose Conditions |
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