Stretchable Organic Thin-Film Transistors Fabricated on Wavy-Dimensional Elastomer Substrates Using Stiff-Island Structures
Stretchable organic thin-film transistors (OTFTs) were fabricated on the polydimethysiloxane (PDMS) elastomer substrates by employing the wavy-dimensional and polyimide stiff-island structures. A low-temperature solution process was also designed to obtain high strain profiles. The endurable maximum...
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| Veröffentlicht in: | IEEE electron device letters 2014-07, Vol.35 (7), p.762-764 |
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| container_title | IEEE electron device letters |
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| creator | Choi, Jeong-Seon Park, Chan Woo Na, Bock Soon Lim, Sang Chul Lee, Sang Seok Cho, Kyoung-Ik Chu, Hye Yong Koo, Jae Bon Jung, Soon-Won Yoon, Sung-Min |
| description | Stretchable organic thin-film transistors (OTFTs) were fabricated on the polydimethysiloxane (PDMS) elastomer substrates by employing the wavy-dimensional and polyimide stiff-island structures. A low-temperature solution process was also designed to obtain high strain profiles. The endurable maximum strains were estimated to be 2.28, 9.70, and 9.32% for the OTFTs formed on the flat, 1D-, and 2D-wavy PDMS elastomers, respectively. The field-effect mobilities were obtained to be 5 ~ 7 × 10 -4 cm 2 V -1 s -1 for all devices and they did not exhibit any degradation under the stretchable conditions before the fracture. The results suggest that the proposed methodologies were quite suitable for high-performance stretchable OTFTs. |
| doi_str_mv | 10.1109/LED.2014.2324559 |
| format | Article |
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A low-temperature solution process was also designed to obtain high strain profiles. The endurable maximum strains were estimated to be 2.28, 9.70, and 9.32% for the OTFTs formed on the flat, 1D-, and 2D-wavy PDMS elastomers, respectively. The field-effect mobilities were obtained to be 5 ~ 7 × 10 -4 cm 2 V -1 s -1 for all devices and they did not exhibit any degradation under the stretchable conditions before the fracture. The results suggest that the proposed methodologies were quite suitable for high-performance stretchable OTFTs.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2014.2324559</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Logic gates ; Organic thin film transistors ; organic thin-film transistor (OTFT) ; polydimethysiloxane elastomer ; Polymers ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; solution process ; Strain ; Stretchable electronics ; Substrates ; Transistors ; wavy-dimensional structure</subject><ispartof>IEEE electron device letters, 2014-07, Vol.35 (7), p.762-764</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Jul 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c321t-420945487d021996b95f1f7f2ec220aaa5fde969cb77c95be9fb24c106bc66473</citedby><cites>FETCH-LOGICAL-c321t-420945487d021996b95f1f7f2ec220aaa5fde969cb77c95be9fb24c106bc66473</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6825836$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6825836$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28721671$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Choi, Jeong-Seon</creatorcontrib><creatorcontrib>Park, Chan Woo</creatorcontrib><creatorcontrib>Na, Bock Soon</creatorcontrib><creatorcontrib>Lim, Sang Chul</creatorcontrib><creatorcontrib>Lee, Sang Seok</creatorcontrib><creatorcontrib>Cho, Kyoung-Ik</creatorcontrib><creatorcontrib>Chu, Hye Yong</creatorcontrib><creatorcontrib>Koo, Jae Bon</creatorcontrib><creatorcontrib>Jung, Soon-Won</creatorcontrib><creatorcontrib>Yoon, Sung-Min</creatorcontrib><title>Stretchable Organic Thin-Film Transistors Fabricated on Wavy-Dimensional Elastomer Substrates Using Stiff-Island Structures</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Stretchable organic thin-film transistors (OTFTs) were fabricated on the polydimethysiloxane (PDMS) elastomer substrates by employing the wavy-dimensional and polyimide stiff-island structures. A low-temperature solution process was also designed to obtain high strain profiles. The endurable maximum strains were estimated to be 2.28, 9.70, and 9.32% for the OTFTs formed on the flat, 1D-, and 2D-wavy PDMS elastomers, respectively. The field-effect mobilities were obtained to be 5 ~ 7 × 10 -4 cm 2 V -1 s -1 for all devices and they did not exhibit any degradation under the stretchable conditions before the fracture. The results suggest that the proposed methodologies were quite suitable for high-performance stretchable OTFTs.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Logic gates</subject><subject>Organic thin film transistors</subject><subject>organic thin-film transistor (OTFT)</subject><subject>polydimethysiloxane elastomer</subject><subject>Polymers</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>solution process</subject><subject>Strain</subject><subject>Stretchable electronics</subject><subject>Substrates</subject><subject>Transistors</subject><subject>wavy-dimensional structure</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1LAzEQhoMoWD_ugpeAeNya72yOoq0KBQ-teFyyaaKR7a5mskLxzxtp8TQM87zDzIPQBSVTSom5Wczup4xQMWWcCSnNAZpQKeuKSMUP0YRoQStOiTpGJwAfpJBCiwn6Webks3u3befxc3qzfXR49R77ah67DV4l20OEPCTAc9um6Gz2azz0-NV-b6v7uPFlPvS2w7POFm7jE16OLeRUQMAvEPs3vMwxhOoJOtuvS5NGl8fk4QwdBduBP9_XU_Qyn63uHqvF88PT3e2icpzRXAlGjJCi1mvCqDGqNTLQoAPzjjFirZVh7Y0yrtXaGdl6E1omXPm1dUoJzU_R1W7vZxq-Rg-5-RjGVG6GhkphpOCS14UiO8qlASD50HymuLFp21DS_CluiuLmT3GzV1wi1_vFFpztQpHlIvznWK0ZVZoW7nLHRe_9_1jVTNZc8V_rhoXS</recordid><startdate>20140701</startdate><enddate>20140701</enddate><creator>Choi, Jeong-Seon</creator><creator>Park, Chan Woo</creator><creator>Na, Bock Soon</creator><creator>Lim, Sang Chul</creator><creator>Lee, Sang Seok</creator><creator>Cho, Kyoung-Ik</creator><creator>Chu, Hye Yong</creator><creator>Koo, Jae Bon</creator><creator>Jung, Soon-Won</creator><creator>Yoon, Sung-Min</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| subjects | Applied sciences Electronics Exact sciences and technology Logic gates Organic thin film transistors organic thin-film transistor (OTFT) polydimethysiloxane elastomer Polymers Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices solution process Strain Stretchable electronics Substrates Transistors wavy-dimensional structure |
| title | Stretchable Organic Thin-Film Transistors Fabricated on Wavy-Dimensional Elastomer Substrates Using Stiff-Island Structures |
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