STT-MRAM Sensing Circuit With Self-Body Biasing in Deep Submicron Technologies

Conventional spin transfer torque MRAM sensing circuits suffer from a small sensing margin and a large sensing margin variation in deep submicron technologies. The small sensing margin issue becomes worse in the low-leakage process technology due to the higher threshold voltage. In this brief, the s...

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Veröffentlicht in:	IEEE transactions on very large scale integration (VLSI) systems 2014-07, Vol.22 (7), p.1630-1634
Hauptverfasser:	Jisu Kim, Kyungho Ryu, Jung Pill Kim, Kang, Seung H., Seong-Ook Jung
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Body biasing Channels Circuits Detection Integrated circuit modeling IO device Leakage current Leakage currents Random access memory sensing circuit sensing margin Sensors spin transfer torque MRAM (STT-MRAM) Threshold voltage Torque Transistors Very large scale integration Voltage
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