A 128-Stage Analog Accumulator for CMOS TDI Image Sensor
The impacts of parasitic phenomenon on the performance of the analog accumulator in CMOS TDI image sensor are analyzed in this paper, and a modified accumulator with decoupling capacitor Cd to combat the parasitic phenomenon is also proposed. A 128-stage modified accumulator is designed and simulate...
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| Veröffentlicht in: | IEEE transactions on circuits and systems. I, Regular papers Regular papers, 2014-07, Vol.61 (7), p.1952-1961 |
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| container_end_page | 1961 |
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| container_issue | 7 |
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| container_title | IEEE transactions on circuits and systems. I, Regular papers |
| container_volume | 61 |
| creator | Nie, Kaiming Yao, Suying Xu, Jiangtao Gao, Jing Xia, Yu |
| description | The impacts of parasitic phenomenon on the performance of the analog accumulator in CMOS TDI image sensor are analyzed in this paper, and a modified accumulator with decoupling capacitor Cd to combat the parasitic phenomenon is also proposed. A 128-stage modified accumulator is designed and simulated. A prototype 1024 × 128 CMOS TDI image sensor with the 128-stage modified accumulator is fabricated in 0.18- μm one-poly four-metal 1.8 V/3.3 V CMOS technology. With a line rate of 3875 lines/s, at 128 stages the measured sensitivity and SNR improvement of the fabricated sensor are 617.1 V/lux·s and 16.6 dB respectively. The simulation and experiment results have proved the effectiveness of the decoupling capacitor C d when combating the parasitic phenomenon in the analog accumulator. The proposed modified accumulator is suitable for application in CMOS TDI image sensor with high stages. |
| doi_str_mv | 10.1109/TCSI.2014.2304663 |
| format | Article |
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A 128-stage modified accumulator is designed and simulated. A prototype 1024 × 128 CMOS TDI image sensor with the 128-stage modified accumulator is fabricated in 0.18- μm one-poly four-metal 1.8 V/3.3 V CMOS technology. With a line rate of 3875 lines/s, at 128 stages the measured sensitivity and SNR improvement of the fabricated sensor are 617.1 V/lux·s and 16.6 dB respectively. The simulation and experiment results have proved the effectiveness of the decoupling capacitor C d when combating the parasitic phenomenon in the analog accumulator. The proposed modified accumulator is suitable for application in CMOS TDI image sensor with high stages.</description><identifier>ISSN: 1549-8328</identifier><identifier>EISSN: 1558-0806</identifier><identifier>DOI: 10.1109/TCSI.2014.2304663</identifier><identifier>CODEN: ITCSCH</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Accumulators ; Analog accumulator ; Capacitors ; CMOS ; CMOS image sensor ; CMOS integrated circuits ; CMOS technology ; Decoupling ; Digital cameras ; Image sensors ; Layout ; Noise levels ; Sensors ; Signal to noise ratio ; signal-to-noise ratio (SNR) ; Simulation ; time delay integration (TDI)</subject><ispartof>IEEE transactions on circuits and systems. I, Regular papers, 2014-07, Vol.61 (7), p.1952-1961</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Jul 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c396t-f8764b6e2dfc99eb6773167a42e7f76d4832433a2c9e9c93d0d9a31284d14ee43</citedby><cites>FETCH-LOGICAL-c396t-f8764b6e2dfc99eb6773167a42e7f76d4832433a2c9e9c93d0d9a31284d14ee43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6742633$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6742633$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Nie, Kaiming</creatorcontrib><creatorcontrib>Yao, Suying</creatorcontrib><creatorcontrib>Xu, Jiangtao</creatorcontrib><creatorcontrib>Gao, Jing</creatorcontrib><creatorcontrib>Xia, Yu</creatorcontrib><title>A 128-Stage Analog Accumulator for CMOS TDI Image Sensor</title><title>IEEE transactions on circuits and systems. I, Regular papers</title><addtitle>TCSI</addtitle><description>The impacts of parasitic phenomenon on the performance of the analog accumulator in CMOS TDI image sensor are analyzed in this paper, and a modified accumulator with decoupling capacitor Cd to combat the parasitic phenomenon is also proposed. A 128-stage modified accumulator is designed and simulated. A prototype 1024 × 128 CMOS TDI image sensor with the 128-stage modified accumulator is fabricated in 0.18- μm one-poly four-metal 1.8 V/3.3 V CMOS technology. With a line rate of 3875 lines/s, at 128 stages the measured sensitivity and SNR improvement of the fabricated sensor are 617.1 V/lux·s and 16.6 dB respectively. The simulation and experiment results have proved the effectiveness of the decoupling capacitor C d when combating the parasitic phenomenon in the analog accumulator. The proposed modified accumulator is suitable for application in CMOS TDI image sensor with high stages.</description><subject>Accumulators</subject><subject>Analog accumulator</subject><subject>Capacitors</subject><subject>CMOS</subject><subject>CMOS image sensor</subject><subject>CMOS integrated circuits</subject><subject>CMOS technology</subject><subject>Decoupling</subject><subject>Digital cameras</subject><subject>Image sensors</subject><subject>Layout</subject><subject>Noise levels</subject><subject>Sensors</subject><subject>Signal to noise ratio</subject><subject>signal-to-noise ratio (SNR)</subject><subject>Simulation</subject><subject>time delay integration (TDI)</subject><issn>1549-8328</issn><issn>1558-0806</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkD9rwzAQxUVpoWnaD1C6GLp0cSrpFFkaTfrPkJLB6SwU-RwS7DiV7KHfvjIJHTocd3C_O957hNwzOmOM6uf1oixmnDIx40CFlHBBJmw-VylVVF6Os9CpAq6uyU0Ie0q5psAmROUJ4yote7vFJD_YptsmuXNDOzS273xSx1p8rspk_VIkRTtSJR5C52_JVW2bgHfnPiVfb6_rxUe6XL0Xi3yZOtCyT2uVSbGRyKvaaY0bmWXAZGYFx6zOZCWiJgFgudOonYaKVtpClCQqJhAFTMnT6e_Rd98Dht60u-CwaewBuyGYaFJLDRnwiD7-Q_fd4KOnkRKSKlAKIsVOlPNdCB5rc_S71vofw6gZszRjlmbM0pyzjDcPp5sdIv7xMhM8LuEXicNrhQ</recordid><startdate>20140701</startdate><enddate>20140701</enddate><creator>Nie, Kaiming</creator><creator>Yao, Suying</creator><creator>Xu, Jiangtao</creator><creator>Gao, Jing</creator><creator>Xia, Yu</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20140701</creationdate><title>A 128-Stage Analog Accumulator for CMOS TDI Image Sensor</title><author>Nie, Kaiming ; Yao, Suying ; Xu, Jiangtao ; Gao, Jing ; Xia, Yu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c396t-f8764b6e2dfc99eb6773167a42e7f76d4832433a2c9e9c93d0d9a31284d14ee43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Accumulators</topic><topic>Analog accumulator</topic><topic>Capacitors</topic><topic>CMOS</topic><topic>CMOS image sensor</topic><topic>CMOS integrated circuits</topic><topic>CMOS technology</topic><topic>Decoupling</topic><topic>Digital cameras</topic><topic>Image sensors</topic><topic>Layout</topic><topic>Noise levels</topic><topic>Sensors</topic><topic>Signal to noise ratio</topic><topic>signal-to-noise ratio (SNR)</topic><topic>Simulation</topic><topic>time delay integration (TDI)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nie, Kaiming</creatorcontrib><creatorcontrib>Yao, Suying</creatorcontrib><creatorcontrib>Xu, Jiangtao</creatorcontrib><creatorcontrib>Gao, Jing</creatorcontrib><creatorcontrib>Xia, Yu</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on circuits and systems. I, Regular papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nie, Kaiming</au><au>Yao, Suying</au><au>Xu, Jiangtao</au><au>Gao, Jing</au><au>Xia, Yu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A 128-Stage Analog Accumulator for CMOS TDI Image Sensor</atitle><jtitle>IEEE transactions on circuits and systems. I, Regular papers</jtitle><stitle>TCSI</stitle><date>2014-07-01</date><risdate>2014</risdate><volume>61</volume><issue>7</issue><spage>1952</spage><epage>1961</epage><pages>1952-1961</pages><issn>1549-8328</issn><eissn>1558-0806</eissn><coden>ITCSCH</coden><abstract>The impacts of parasitic phenomenon on the performance of the analog accumulator in CMOS TDI image sensor are analyzed in this paper, and a modified accumulator with decoupling capacitor Cd to combat the parasitic phenomenon is also proposed. A 128-stage modified accumulator is designed and simulated. A prototype 1024 × 128 CMOS TDI image sensor with the 128-stage modified accumulator is fabricated in 0.18- μm one-poly four-metal 1.8 V/3.3 V CMOS technology. With a line rate of 3875 lines/s, at 128 stages the measured sensitivity and SNR improvement of the fabricated sensor are 617.1 V/lux·s and 16.6 dB respectively. The simulation and experiment results have proved the effectiveness of the decoupling capacitor C d when combating the parasitic phenomenon in the analog accumulator. The proposed modified accumulator is suitable for application in CMOS TDI image sensor with high stages.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TCSI.2014.2304663</doi><tpages>10</tpages></addata></record> |
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| subjects | Accumulators Analog accumulator Capacitors CMOS CMOS image sensor CMOS integrated circuits CMOS technology Decoupling Digital cameras Image sensors Layout Noise levels Sensors Signal to noise ratio signal-to-noise ratio (SNR) Simulation time delay integration (TDI) |
| title | A 128-Stage Analog Accumulator for CMOS TDI Image Sensor |
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