High Density Solenoidal Series Pair Symmetric Inductors and Transformers
A high density symmetric inductor using a novel combination of solenoidal wound series stacked spirals is proposed in this paper. Series stacking in the individual sections increases overall inductance density, while solenoidal winding pushes the quality factors (Q) to higher frequencies. The propos...
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Veröffentlicht in: | IEEE transactions on electron devices 2014-07, Vol.61 (7), p.2503-2508 |
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description | A high density symmetric inductor using a novel combination of solenoidal wound series stacked spirals is proposed in this paper. Series stacking in the individual sections increases overall inductance density, while solenoidal winding pushes the quality factors (Q) to higher frequencies. The proposed inductor achieves more than 65% improvement in peak-Q value and 100% higher peak-Q frequency and self resonance frequency, while occupying 20% lesser area when compared with a standard symmetric inductor with crossovers. Implemented in a high resistivity 0.18 μm CMOS silicon-on-insulator process with dual-thick metal stack, the proposed inductor achieves 70-nH inductance and a Q of 11.3 operating at 1.6 Gilz within 250 × 250 μm 2 area. This translates to a record figure-of-merit of 12.2, which is highest in air core symmetric inductor literature. Further, the proposed inductor configuration is extended to realize a planar transformer with very high turns ratio of 9.25 using only two metals. |
doi_str_mv | 10.1109/TED.2014.2323357 |
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Series stacking in the individual sections increases overall inductance density, while solenoidal winding pushes the quality factors (Q) to higher frequencies. The proposed inductor achieves more than 65% improvement in peak-Q value and 100% higher peak-Q frequency and self resonance frequency, while occupying 20% lesser area when compared with a standard symmetric inductor with crossovers. Implemented in a high resistivity 0.18 μm CMOS silicon-on-insulator process with dual-thick metal stack, the proposed inductor achieves 70-nH inductance and a Q of 11.3 operating at 1.6 Gilz within 250 × 250 μm 2 area. This translates to a record figure-of-merit of 12.2, which is highest in air core symmetric inductor literature. Further, the proposed inductor configuration is extended to realize a planar transformer with very high turns ratio of 9.25 using only two metals.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2014.2323357</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Capacitance ; CMOS ; Conductivity ; Density ; Electrical resistivity ; High density ; Inductance ; Inductance density ; Inductors ; Metals ; Quality factor ; Silicon ; silicon-on-insulator (SOI) ; solenoidal winding ; Spirals ; symmetric inductor ; symmetric transformer ; Transformers</subject><ispartof>IEEE transactions on electron devices, 2014-07, Vol.61 (7), p.2503-2508</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Jul 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c324t-5972fc91e20d8446ea825dc8fe9dc686f34cd44c958c1d4a6c7e01b1926a73fe3</citedby><cites>FETCH-LOGICAL-c324t-5972fc91e20d8446ea825dc8fe9dc686f34cd44c958c1d4a6c7e01b1926a73fe3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6824756$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,782,786,798,27933,27934,54767</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6824756$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Vanukuru, Venkata Narayana Rao</creatorcontrib><creatorcontrib>Chakravorty, Anjan</creatorcontrib><title>High Density Solenoidal Series Pair Symmetric Inductors and Transformers</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>A high density symmetric inductor using a novel combination of solenoidal wound series stacked spirals is proposed in this paper. Series stacking in the individual sections increases overall inductance density, while solenoidal winding pushes the quality factors (Q) to higher frequencies. The proposed inductor achieves more than 65% improvement in peak-Q value and 100% higher peak-Q frequency and self resonance frequency, while occupying 20% lesser area when compared with a standard symmetric inductor with crossovers. Implemented in a high resistivity 0.18 μm CMOS silicon-on-insulator process with dual-thick metal stack, the proposed inductor achieves 70-nH inductance and a Q of 11.3 operating at 1.6 Gilz within 250 × 250 μm 2 area. This translates to a record figure-of-merit of 12.2, which is highest in air core symmetric inductor literature. Further, the proposed inductor configuration is extended to realize a planar transformer with very high turns ratio of 9.25 using only two metals.</description><subject>Capacitance</subject><subject>CMOS</subject><subject>Conductivity</subject><subject>Density</subject><subject>Electrical resistivity</subject><subject>High density</subject><subject>Inductance</subject><subject>Inductance density</subject><subject>Inductors</subject><subject>Metals</subject><subject>Quality factor</subject><subject>Silicon</subject><subject>silicon-on-insulator (SOI)</subject><subject>solenoidal winding</subject><subject>Spirals</subject><subject>symmetric inductor</subject><subject>symmetric transformer</subject><subject>Transformers</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkEtLAzEURoMoWKt7wU3AjZupeU0mWUqttlBQaF2HmNzRlHnUZLrovzelxYWry4Xz3cdB6JaSCaVEP65nzxNGqJgwzjgvqzM0omVZFVoKeY5GhFBVaK74JbpKaZNbKQQbofk8fH3jZ-hSGPZ41TfQ9cHbBq8gBkj43YaIV_u2hSEGhxed37mhjwnbzuN1tF2q-9hCTNfoorZNgptTHaOPl9l6Oi-Wb6-L6dOycJyJoSh1xWqnKTDilRASrGKld6oG7Z1UsubCeSGcLpWjXljpKiD0k2ombcVr4GP0cJy7jf3PDtJg2pAcNI3toN8lk5_WUjFdqYze_0M3_S52-bpMCUnyUKIzRY6Ui31KEWqzjaG1cW8oMQe1Jqs1B7XmpDZH7o6RAAB_eN4qqlLyX3jfdAM</recordid><startdate>20140701</startdate><enddate>20140701</enddate><creator>Vanukuru, Venkata Narayana Rao</creator><creator>Chakravorty, Anjan</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20140701</creationdate><title>High Density Solenoidal Series Pair Symmetric Inductors and Transformers</title><author>Vanukuru, Venkata Narayana Rao ; Chakravorty, Anjan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c324t-5972fc91e20d8446ea825dc8fe9dc686f34cd44c958c1d4a6c7e01b1926a73fe3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Capacitance</topic><topic>CMOS</topic><topic>Conductivity</topic><topic>Density</topic><topic>Electrical resistivity</topic><topic>High density</topic><topic>Inductance</topic><topic>Inductance density</topic><topic>Inductors</topic><topic>Metals</topic><topic>Quality factor</topic><topic>Silicon</topic><topic>silicon-on-insulator (SOI)</topic><topic>solenoidal winding</topic><topic>Spirals</topic><topic>symmetric inductor</topic><topic>symmetric transformer</topic><topic>Transformers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vanukuru, Venkata Narayana Rao</creatorcontrib><creatorcontrib>Chakravorty, Anjan</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Vanukuru, Venkata Narayana Rao</au><au>Chakravorty, Anjan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High Density Solenoidal Series Pair Symmetric Inductors and Transformers</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2014-07-01</date><risdate>2014</risdate><volume>61</volume><issue>7</issue><spage>2503</spage><epage>2508</epage><pages>2503-2508</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A high density symmetric inductor using a novel combination of solenoidal wound series stacked spirals is proposed in this paper. Series stacking in the individual sections increases overall inductance density, while solenoidal winding pushes the quality factors (Q) to higher frequencies. The proposed inductor achieves more than 65% improvement in peak-Q value and 100% higher peak-Q frequency and self resonance frequency, while occupying 20% lesser area when compared with a standard symmetric inductor with crossovers. Implemented in a high resistivity 0.18 μm CMOS silicon-on-insulator process with dual-thick metal stack, the proposed inductor achieves 70-nH inductance and a Q of 11.3 operating at 1.6 Gilz within 250 × 250 μm 2 area. This translates to a record figure-of-merit of 12.2, which is highest in air core symmetric inductor literature. Further, the proposed inductor configuration is extended to realize a planar transformer with very high turns ratio of 9.25 using only two metals.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2014.2323357</doi><tpages>6</tpages></addata></record> |
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subjects | Capacitance CMOS Conductivity Density Electrical resistivity High density Inductance Inductance density Inductors Metals Quality factor Silicon silicon-on-insulator (SOI) solenoidal winding Spirals symmetric inductor symmetric transformer Transformers |
title | High Density Solenoidal Series Pair Symmetric Inductors and Transformers |
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