Higher Dislocation Density of Arsenic-Doped HgCdTe Material

There is a well-known direct negative correlation between dislocation density and optoelectronic device performance. Reduction in detector noise associated with dislocations is an important target for improvement of mercury cadmium telluride (Hg 1− x Cd x Te)-based material in order to broaden its u...

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Veröffentlicht in:	Journal of electronic materials 2014-08, Vol.43 (8), p.3018-3024
Hauptverfasser:	Vilela, M.F., Olsson, K.R., Rybnicek, K., Bangs, J.W., Jones, K.A., Harris, S.F., Smith, K.D., Lofgreen, D.D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Arsenic Characterization and Evaluation of Materials Chemistry and Materials Science Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities in crystals microstructure Electronics Electronics and Microelectronics Exact sciences and technology Instrumentation Linear defects: dislocations, disclinations Materials Science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Optical and Electronic Materials Optoelectronic devices Physics Semiconductor doping Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid State Physics Structure of solids and liquids crystallography Structure of specific crystalline solids Substrates
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