GaSb: A New Alternative Substrate for Epitaxial Growth of HgCdTe

In this work, GaSb is proposed as a new alternative substrate for the growth of HgCdTe via molecular beam epitaxy (MBE). Due to the smaller mismatch in both lattice constant and coefficient of thermal expansion between GaSb and HgCdTe, GaSb presents a better alternative substrate for the epitaxial g...

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Veröffentlicht in:	Journal of electronic materials 2014-08, Vol.43 (8), p.2788-2794
Hauptverfasser:	Lei, W., Gu, R. J., Antoszewski, J., Dell, J., Faraone, L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Characterization and Evaluation of Materials Chemistry and Materials Science Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Electronics Electronics and Microelectronics Exact sciences and technology Instrumentation Materials Science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Molecular beam epitaxy Molecular, atomic, ion, and chemical beam epitaxy Optical and Electronic Materials Optoelectronic devices Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid State Physics Structure of solids and liquids crystallography Structure of specific crystalline solids Substrates Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation
Online-Zugang:	Volltext
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